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Design Of Analog Cmos Integrated Circuits

Due to the unprecedented growth in wireless applications over the past decade, development of low-cost solutions for RF and microwave communication systems has become of great importance. This practical new book is the first comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible. The books offers you an in-depth understanding of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Supported with over 220 equations and more than 200 illustrations, it covers the practical aspects of each element in exceptional detail. No other single volume treats this subject matter in such depth. From materials, fabrication, and analyses - to design, modeling, and physical, electrical, and thermal applications, this unique resource offers you complete coverage of the critical topics you need understand for your work in the field. Offering the most comprehensive, up-to-date body of knowledge on lumped elements, the book is an indispensable professional reference and serves as an excellent text for senior undergraduate and graduate-level courses in RF and microwave circuit design.

Lumped Elements for RF and Microwave Circuits

A software-defined radio (SDR) receiver with baseband programmable RF bandpass filter (BPF) and complex impedance match is presented. The passive mixer-first architecture used here allows the impedance characteristics of the receiver's baseband circuits to be translated to the RF port of the receiver. Tuning the resistance at the baseband port allows for a real impedance match to the antenna. The addition of "complex feedback" between I and Q paths allows for matching to the imaginary component of the antenna impedance. By implementing both real and imaginary components with resistors in feedback around low noise baseband amplifiers, noise figure is also kept low. Tunable sampling capacitors on the baseband side of the passive mixer translate to tunable-Q filters on the RF port which allow for very good out-of-band linearity. Furthermore, the concept of in-band and out-of-band must be redefined as the impedance match and BPF center frequency move with the LO frequency, such that matching and filtering track the receive frequency. Additionally, 8-phase mixing is shown to provide significant benefits such as impedance matching range, rejection of blockers at LO harmonics, and lower noise figure (NF). Measurements from the receiver implemented in 65 nm CMOS show 70 dB of gain, NF as low as 3 dB, and 25 dBm out-of-band IIP3. Furthermore, tunable impedance matching shows that S11 <;- 30 dB can be achieved at any receive frequency from 0.1-1.3 GHz.

A Passive Mixer-First Receiver With Digitally Controlled and Widely Tunable RF Interface

In this paper, a class of passive mixer-first, LNA-less receivers is analyzed in depth. Quadrature passive mixers are shown to present the impedance of their baseband port to the RF port and vice versa. This transparency property, in combination with resistive feedback differential amplifiers, and “complex” feedback between the I and Q paths, can be used to control the impedance at the RF port. This impedance can be tuned using only baseband components (i.e., resistors). The noise limits of such an architecture are analyzed and simulated, and are shown to be comparable to standard RF-LNA-first receivers. Accounting for the higher harmonics of the LO frequency proves critical in accurately analyzing the behavior of these circuits and their ability to provide an impedance match with low noise figure. Additionally, it is shown that expanding quadrature passive mixers to harmonic rejection mixers allows for even better noise performance and wider matching range.

Implications of Passive Mixer Transparency for Impedance Matching and Noise Figure in Passive Mixer-First Receivers

This paper presents an innovative high-frequency- based biosensor, which combines both microwave detection and microfluidic network for time-efficient and accurate biological analysis. It is composed of a coplanar waveguide with a microfluidic channel placed on top. With the help of an appropriate de-embedding technique and modeling of the measurements, the relative effective permittivity of human umbilical vein endothelial cells has been evaluated successfully. Furthermore, experiments have been performed with the sensor on various cell concentrations in suspension, which validates its use in bioengineering applications such as cell quantification and counting in solution. This sensor requires no direct contact or use of labels on the cells, contrary to other usual types of biosensors (optical, mechanical or dc/low-frequency-detection-based ones).

Integrated Broadband Microwave and Microfluidic Sensor Dedicated to Bioengineering

An integrated 2.4 GHz CMOS receiver front-end according to the IEEE 802.15.4 standard is presented in this paper. It integrates the overall RF part, from the balun up to the first stage of the channel filter, as well as the cells for the LO signal conditioning. The proposed architecture is based on a 6 MHz low-IF topology, which uses an inductorless LNA and a new clocking scheme for driving a passive mixer. When integrated in a 90 nm CMOS technology, the receiver front-end exhibits an area of only 0.07 mm2, or 0.23 mm2 when including an input integrated balun. The overall chip consumes 4 mA from a single 1.35 V supply voltage and it achieves a 35 dB conversion gain from input power in dBm to output voltage in dBvpk, a 7.5 dB NF value, -10 dBm of IIP3 and more than 32 dB of image rejection.

A 5.4 mW/0.07 mm $^{2}$ 2.4 GHz Front-End Receiver in 90 nm CMOS for IEEE 802.15.4 WPAN Standard

Noise properties of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs (PHEMTs) have been investigated simultaneously in the low and intermediate frequency range (10 Hz to 150 MHz) and in the microwave range (4 to 18 GHz) and compared to the noise of more classical devices such as MESFETs and GaAlAs/GaAs HEMTs. Unlike the other commercially available devices, PHEMTs exhibit the unique capability of providing simultaneously state-of-the-art microwave noise performance and a reasonable low-frequency excess noise. >

Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz

A new method is derived for computing the wave propagation constant γ of a uniform transmission line. The new method is based on the properties of a similar and unitary matrix, and allows us to minimize the errors due to connection repeatability. These matrices are obtained from the wave cascade matrices (computed from scattering parameter measurements) of two different length lines of identical but unknown characteristic impedance. The usefulness of the new method is demonstrated by assessing the dispersion of the dielectric constant eeff and the attenuation constant α of an ultra-low-loss transmission line in the frequency range of 0.040–65 GHz. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 22: 268–271, 1999.

An improved method for the wave propagation constant ? estimation in broadband uniform millimeter-wave transmission line

This letter deals with the design of an active balun exhibiting a single-ended input and balanced outputs. We propose an original method, based on the determination of specific impedance for connecting the differential transistor pair to ground, which greatly improves the balanced behavior over a broadband frequency range. The usefulness of this method is demonstrated through a 180/spl deg/ power divider implemented on a 0.25-/spl mu/m SiGe BiCMOS process. According to simulations, measurements confirm a broadband well balanced behavior, since the power splitter exhibits phase and amplitude errors between the two channels less than 4/spl deg/ and 0.5dB, respectively, from 0.2 to 22 GHz. These errors are only 0.75/spl deg//0.03 dB in a 2-GHz span around 20 GHz, in accordance with our optimization goals.

Design of an original K-band active balun with improved broadband balanced behavior

A broadband technique for determining electrical properties of dielectric materials is presented, based on microstrip lines. Relative permittivity and loss tangent are computed from S-parameter measurements and analytical equations. The analytical computation is either direct by using equations derived from Bahl formulas, or iterative by using Jensen-Hammerstad formulas coupled with the efficient secant algorithm. Thin film microstrip transmission lines have been fabricated for the extraction of dielectric electrical properties of SU-8 resin. A relative dielectric constant of 2.85 and a loss tangent of 0.04 were determined. These values are used in an EM simulator for the design of an SU-8 based High-Q inductor implemented on a low resistivity silicon substrate. The good agreement between measurements and simulations validates the characterization procedure and confirms the relevance of SU8 for applications up to 15 GHz.

https://hal.archives-ouvertes.fr/hal-01305557/document

Thierry Parra

Papers

A 5.4 mW/0.07 mm $^{2}$ 2.4 GHz Front-End Receiver in 90 nm CMOS for IEEE 802.15.4 WPAN Standard

Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz

An improved method for the wave propagation constant ? estimation in broadband uniform millimeter-wave transmission line

Design of an original K-band active balun with improved broadband balanced behavior

Dielectric microwave characterization of the SU-8 thick resin used in an above IC process