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Omer Mermer

Researcher at Ege University

Publications -  44
Citations -  1601

Omer Mermer is an academic researcher from Ege University. The author has contributed to research in topics: Magnetoresistance & Magnetic field. The author has an hindex of 15, co-authored 44 publications receiving 1449 citations. Previous affiliations of Omer Mermer include Dokuz Eylül University & University of Iowa.

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Large magnetoresistance in nonmagnetic π -conjugated semiconductor thin film devices

TL;DR: In this paper, the authors performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different conjugated polymers and small molecules, including a range of materials that show greatly different chemical structure, mobility, and spin-orbit coupling strength.
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Large magnetoresistance at room temperature in semiconducting polymer sandwich devices

TL;DR: In this paper, a large room temperature magnetoresistance (MR) effect in polyfluorene sandwich devices in weak magnetic fields was found and the effect is related to the hole current in the devices.
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Hyperfine interaction and magnetoresistance in organic semiconductors

TL;DR: In this article, the authors explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect and deduce a simple fitting formula from the hyperfine Hamiltonian that relates the saturation field of the OMAR traces to hyperfine coupling constant.
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Humidity sensing properties of ZnO nanoparticles synthesized by sol–gel process

TL;DR: In this paper, the relative sensitivity of the ZnO nanoparticles-based humidity sensor was determined by electrical resistance measurements, and the dynamic Langmuir adsorption model was used to determine the kinetic parameters such as adaption and desorption rates under relative humidity between 45% and 88%.
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Large magnetoresistance at room-temperature in small-molecular-weight organic semiconductor sandwich devices

TL;DR: In this paper, a large, room temperature magnetoresistance (MR) effect in tris-(8-hydroxyquinoline) aluminum sandwich devices was studied and the effect reached almost 10% at fields of 10mT at room temperature.