O
Omid Hashemipour
Researcher at Shahid Beheshti University
Publications - 101
Citations - 1586
Omid Hashemipour is an academic researcher from Shahid Beheshti University. The author has contributed to research in topics: CMOS & Adder. The author has an hindex of 19, co-authored 100 publications receiving 1351 citations.
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Design of a Novel Reversible Multiplier Circuit Using HNG Gate in Nanotechnology
TL;DR: A novel 4x4 bit reversible multiplier circuit using HNG gate can multiply two 4-bits binary numbers and can be generalized for NxN bit multiplication.
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Two new low-power Full Adders based on majority-not gates
Keivan Navi,Mohammad Hossein Moaiyeri,Reza Faghih Mirzaee,Omid Hashemipour,Babak Mazloom Nezhad +4 more
TL;DR: Two novel low-power 1-bit Full Adder cells are proposed, based on majority-not gates, which are designed with new methods in each cell, and demonstrate improvement in terms of power consumption and power-delay product (PDP).
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A universal method for designing low-power carbon nanotube FET-based multiple-valued logic circuits
Mohammad Hossein Moaiyeri,Reza Faghih Mirzaee,Akbar Doostaregan,Keivan Navi,Omid Hashemipour +4 more
TL;DR: Improvements in terms of power consumption, energy efficiency, robustness and specifically static power dissipation with respect to the other state-of-the-art ternary and quaternary circuits are demonstrated.
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Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics
TL;DR: In this article, two new efficient ternary Full Adder cells for nanoelectronics were proposed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the nanotubes as well as the same carrier mobilities for the N-type and P-type devices.
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Design and Evaluation of CNFET-Based Quaternary Circuits
TL;DR: These Carbon Nanotube FET-based circuits are compatible with the recent technologies and are designed based on the conventional CMOS architecture, while the previous quaternary designs used methods which are not suitable for nanoelectronics and have become obsolete.