Physical limitations for CMOS technology have provided the way for manufacturing the quantum cellular automata technology-based hardware elements at Nano level. From the purpose of very high speed, area and low power consumption, this Nanotechnology has been taken into consideration. Improving their structures will lead promoting the system performance completely, because the Full adders are assumed as major and primary component of computational processors. In current study, the new layout of all single bit full adders in the quantum cellular automata's technology is introduced. In comparison with existing schemes, the suggested circuit has fewer cells and smaller area.

A new quantum-dot cellular automata full-adder

In this paper, a hybrid 1-bit full adder design employing both complementary metal–oxide–semiconductor (CMOS) logic and transmission gate logic is reported. The design was first implemented for 1 bit and then extended for 32 bit also. The circuit was implemented using Cadence Virtuoso tools in 180-and 90-nm technology. Performance parameters such as power, delay, and layout area were compared with the existing designs such as complementary pass-transistor logic, transmission gate adder, transmission function adder, hybrid pass-logic with static CMOS output drive full adder, and so on. For 1.8-V supply at 180-nm technology, the average power consumption (4.1563 $\mu $ W) was found to be extremely low with moderately low delay (224 ps) resulting from the deliberate incorporation of very weak CMOS inverters coupled with strong transmission gates. Corresponding values of the same were 1.17664 $\mu $ W and 91.3 ps at 90-nm technology operating at 1.2-V supply voltage. The design was further extended for implementing 32-bit full adder also, and was found to be working efficiently with only 5.578-ns (2.45-ns) delay and 112.79- $\mu $ W (53.36- $\mu $ W) power at 180-nm (90-nm) technology for 1.8-V (1.2-V) supply voltage. In comparison with the existing full adder designs, the present implementation was found to offer significant improvement in terms of power and speed.

Performance Analysis of a Low-Power High-Speed Hybrid 1-bit Full Adder Circuit

Novel high-performance ternary circuits for nanotechnology are presented here. Each of these carbon nanotube field-effect transistor (CNFET)-based circuits implements all the possible kinds of ternary logic, including negative, positive and standard ternary logics, in one structure. The proposed designs have good driving capability and large noise margins and are robust. These circuits are designed based on the unique properties of CNFETs, such as the capability of setting the desired threshold voltage by changing the diameters of the nanotubes. This property of CNFETs makes them very suitable for the multiple- V t design method. The proposed circuits are simulated exhaustively, using Synopsys HSPICE with 32 nm-CNFET technology in various test situations and different supply voltages. Simulation results demonstrate great improvements in terms of speed, power consumption and insusceptibility to process variations with respect to other conventional and state-of-the-art 32 nm complementary metal-oxide semiconductor and CNFET-based ternary circuits. For instance at 0.9 V, the proposed ternary logic and arithmetic circuits consume on average 53 and 40 less energy, respectively, compared to the CNFET-based ternary logic and arithmetic circuits, recently proposed in the literature.

Design of energy-efficient and robust ternary circuits for nanotechnology

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Carbon Nanotubes Synthesis Structure Properties And Applications

Designing efficient QCA logical circuits with power dissipation analysis

Two new low-power Full Adders based on majority-not gates

This study presents new low-power multiple-valued logic (MVL) circuits for nanoelectronics. These carbon nanotube field effect transistor (FET) (CNTFET)-based MVL circuits are designed based on the unique characteristics of the CNTFET device such as the capability of setting the desired threshold voltages by adopting correct diameters for the nanotubes as well as the same carrier mobility for the P- and N-type devices. These characteristics make CNTFETs very suitable for designing high-performance multiple- V th circuits. The proposed MVL circuits are designed based on the conventional CMOS architecture and by utilising inherently binary gates. Moreover, each of the proposed CNTFET-based ternary circuits includes all the possible types of ternary logic, that is, negative, positive and standard, in one structure. The method proposed in this study is a universal technique for designing MVL logic circuits with any arbitrary number of logic levels, without static power dissipation. The results of the simulations, conducted using Synopsys HSPICE with 32 nm-CNTFET technology, demonstrate improvements in terms of power consumption, energy efficiency, robustness and specifically static power dissipation with respect to the other state-of-the-art ternary and quaternary circuits.

https://ietresearch.onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cdt.2013.0023

A universal method for designing low-power carbon nanotube FET-based multiple-valued logic circuits

This paper presents two new efficient ternary Full Adder cells for nanoelectronics. These CNTFET-based ternary Full Adders are designed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the nanotubes as well as the same carrier mobilities for the N-type and P-type devices. These characteristics of CNTFETs make them very suitable for designing high-performance multiple-Vth structures. The proposed structures reduce the number of the transistors considerably and have very high driving capability. The presented ternary Full Adders are simulated using Synopsys HSPICE with 32 nm CNTFET technology to evaluate their performance and to confirm their correct operation.

/pdf/efficient-cntfet-based-ternary-full-adder-cells-for-35f0q0w8yv.pdf

Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics

This article presents a high-speed and high-performance Carbon Nanotube Field Effect Transistor (CNFET) based Full Adder cell for low-voltage applications. The proposed Full Adder cell is composed of two separate modules with identical hardware configurations which generate the Sum and C out signals in a parallel manner. The great advantage of the proposed structure is its very short critical path which is composed of only two carbon nanotube pass-transistors. This design also takes advantage of the unique properties of metal oxide semiconductor field effect transistor-like CNFETs such as the feasibility of adjusting the threshold voltage of a CNFET by adjusting the diameter of its nanotubes to correct the voltage levels as well as to achieve a high performance. Comprehensive experiments are performed in various situations to evaluate the performance of the proposed design. Simulations are carried out using Synopsys HSPICE with 32-nm Complementary Metal Oxide Semiconductor (CMOS) and 32-nm CNFET technolog...

/pdf/design-and-analysis-of-a-high-performance-cnfet-based-full-45nqsvvma1.pdf

Design and analysis of a high-performance CNFET-based Full Adder

Novel direct designs for 3-input exclusive-OR (XOR) function at transistor level are proposed in this article. These designs are appropriate for low-power and high-speed applications. The critical path of the presented designs consists of only two pass-transistors, which causes low propagation delay. Neither complementary inputs, nor V DD and ground exist in the basic structure of these designs. The proposed designs have low dynamic and short-circuit power consumptions and their internal nodes dissipate negligible leakage power, which leads to low average power consumption. Some effective approaches are presented for improving the performance, voltage levels, and the driving capability and lowering the number of transistors of the basic structure of the designs. All of the proposed designs and several classical and state-of-the-art 3-input XOR circuits are simulated in a realistic condition using HSPICE with 90 nm CMOS technology at six supply voltages, ranging from 1.3 V down to 0.8 V. The simulation res...

Reza Faghih Mirzaee

Papers

Two new low-power Full Adders based on majority-not gates

A universal method for designing low-power carbon nanotube FET-based multiple-valued logic circuits

Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics

Design and analysis of a high-performance CNFET-based Full Adder

Novel direct designs for 3-input XOR function for low-power and high-speed applications