Showing papers in "Microelectronics Journal in 2009"

TL;DR: Two novel low-power 1-bit Full Adder cells are proposed, based on majority-not gates, which are designed with new methods in each cell, and demonstrate improvement in terms of power consumption and power-delay product (PDP).

TL;DR: The adsorption process of small molecules on graphene is investigated through first-principles calculations and the presence of two main charge transfer mechanisms are shown, which depends on the magnetic properties of the adsorbing molecules.

TL;DR: A novel real-time PV simulator based on field programmable gate arrays (FPGAs) that enhances the rapid system prototyping capability and enables the reduction of the power converter size and cost due to the high clock speed feature of the FPGA-based control unit.

TL;DR: Photoluminescence study of needle-like ZnO nanorods grown under standard and oxygen-rich conditions is presented, finding the yellow-orange band at ~580nm increases with excess oxygen during growth and subsequently annealing in a reducing atmosphere shows the disappearance of this band.

TL;DR: The proposed architecture is very simple and generic as it is based on an open loop structure with no specific component such as pll, which allows higher bit rates while maintaining provable unconditional security.

TL;DR: The results demonstrated that using parylene, as the gate dielectric layer is an effective method to fabricate OFETs with improved electric characteristics.

TL;DR: ZnO nanorods and nanodots (with and without a SiO"2 buffer layer) were grown on p-Si, forming p-n heterojunctions, and it seems that the buffer layer increased both the stability and efficiency of the devices, since the buffers could operate at larger applied voltage and showed EL emission under reverse bias.

TL;DR: The linear electrodynamic properties of graphene-the frequency-dependent conductivity, the transmission spectra and collective excitations-are briefly outlined and can be used for creation of new devices for microwave and terahertz optics and electronics.

TL;DR: A new low-power full-adder based on CMOS inverter is presented, which shows full swing logic, balanced outputs and strong output drivability and the time consuming XOR gates are eliminated.

TL;DR: It is shown that no polarization field exists in cubic nitrides and intersubband absorption in cubic AlN/GaN superlattices and the progress towards the development and fabrication of cubic hetero-junction field effect transistors (HFETs) is discussed.

TL;DR: X-ray diffraction and Fourier-transform infrared spectroscopy analyses confirmed the formation of the ferrite structure after a reaction time as short as 5min, and M-H measurements verified the strong influence of synthesis conditions and crystal size on the magnetic properties of ferrite nanocrystals.

TL;DR: Two schemes utilizing the unique electronic properties of carbon nanot tubes for novel THz applications including tunable THz generation by hot electrons in quasi-metallic nanotubes and THz radiation detection by armchair Nanotubes in strong magnetic fields are proposed and justified.

TL;DR: Comparisons are made between SPICE simulations using the proposed models and with numerical simulations carried out with Mathematica software to illustrate accuracy of the distributed parameter models and show how inappropriate it is to assume, in some cases, constant material parameters for an entire thermoelectric element.

TL;DR: In this paper, a new full-wave rectifier topology is presented, which uses MOS transistors as low-loss switches to achieve a significant increase in overall power efficiency and reduced voltage drop.

TL;DR: The nanocrystals were obtained using a simple procedure based on the arrested precipitation of ZnSe in aqueous solution in the presence of a thiol-alkyl stabilizing agent, in air and at room temperature.

TL;DR: The lowest achieved room-temperature electron concentration was at the level of 10^1^6cm^-^3 with mobility up to 110cm^2/Vs, and the average growth temperature and precursors' doses affected electron concentration and Hall mobility of obtained zinc oxide layers.

TL;DR: HSPICE simulations, carried out using Berkeley predictive technology model (BPTM), show that for a cell ratio and pull-up ratio of 1, CNFET-based 6T SRAM cell provides an improvement of 21% in read static noise margin (SNM) at VDD=0.4V.

TL;DR: An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy and low-temperature photoluminescence and Cu atoms showed different behaviors in theZnO matrix as a function of oxygen gas pressure.

TL;DR: In this paper, the design of an ultra-low-power UHF RFID tag is introduced, and the system architecture and the communication protocols are chosen to operate with the minimum requirements possible from the RFID tags.

TL;DR: The present study focused on ZnO thin films fabricated by sol-gel process and spin coated onto Si (100) and quartz substrates, determined by photoluminescence (PL) and absorption spectroscopy to observe optical characteristics of high-quality thin films.

TL;DR: This paper addresses a number of major trends underlying the continuing effort to realize practical optoelectronic, electronic, and information-processing devices based on ensembles of quantum dots assembled in a variety of matrix materials.

TL;DR: A fused floating-point multiply/divide/square root unit based on Taylor-series expansion algorithm is proposed to incorporate the square root function with little area and latency overhead since Taylor's theorem enables us to compute approximations for many well-known functions with very similar forms.

TL;DR: A novel SRAM circuit technique with optimized boosting levels expands the read margin and the write margin to a sufficient amount without an increase of cell size and improves the circuit speed in low-voltage operation.

TL;DR: The proposed integrated solution, having both low-voltage (LV) and low-power (LP) characteristics, can be applied with success in suitable IC applications such as floating capacitance multipliers and floating inductance simulators, utilizing a minimum number of active components.

TL;DR: ZnO nanorods grown by catalyst-free metal-organic chemical vapour deposition (MOCVD) in a commercial Epigress reactor using diethylzinc and N"2O as precursors confirm the very good crystalline quality of the nanorod.

TL;DR: Experimental results revealed unpredicted and hitherto unknown ZnO)"n clusters of enhanced stability (''magic clusters'') at n=34, 60 and 78, and Cage-like structures for the magic clusters have been suggested.

TL;DR: Low-temperature cathodoluminescence measurements with very high spatial resolution and high-resolution transmission electron microscope investigations carried out on the same pieces of hetero-epitaxial ZnO samples with unusual layer orientation allow us to correlate this emission unambiguously with c-plane stacking faults.

TL;DR: This paper aims to review literature about OTP memories and show that metal fuse, polyfuse and antifuse are the best candidates so far and a comprehensive review about the parameters impacting the performances, the density and the cost of the OTP bitcell.

TL;DR: In this paper, a variable threshold voltage keeper circuit technique using independent-gate FinFET technology is proposed for simultaneous power reduction and speed enhancement in domino logic circuits, where the threshold voltage of a keeper transistor is dynamically modified during circuit operation to reduce contention current without sacrificing noise immunity.

TL;DR: Optical transparency of these ZnO layers has been studied in order to evaluate their applications as a transparent conducting oxide (TCO) material.