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P. K. Giri

Researcher at Indian Institute of Technology Guwahati

Publications -  179
Citations -  5781

P. K. Giri is an academic researcher from Indian Institute of Technology Guwahati. The author has contributed to research in topics: Photoluminescence & Raman spectroscopy. The author has an hindex of 38, co-authored 158 publications receiving 4528 citations. Previous affiliations of P. K. Giri include Shiv Nadar University & Kobe University.

Papers
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Intense ultraviolet-blue photoluminescence from SiO2 embedded ge nanocrystals prepared by different techniques.

P. K. Giri, +4 more
- 01 Sep 2009 - 
TL;DR: The results indicate that contrary to the literature reports, the approximately 400 nm PL emission is band is not unique to the presence of Ge in the SiO2 matrix and it is likely to originate from a defective NC/SiO2 interface, irrespective of the species of NCs.
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Simultaneous formation of Si and Ge nanocrystals in SiO2 by one step ion implantation

P. K. Giri, +4 more
- 15 Mar 2006 - 
TL;DR: In this article, X-ray diffraction and Raman scattering studies on implanted samples reveal that Germanium (Ge) and silicon nanocrystals (NCs) are formed embedded in SiO 2 for Ge fluence in the range 3.
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Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon

P. K. Giri, +6 more
- 30 Mar 2001 - 
TL;DR: In this paper, low-temperature photoluminescence (PL) spectroscopy, in conjunction with transmission electron microscopy and optical microscopy (OM) have been carried out to investigate the origin of radiative recombination from various extended defects that evolve during high temperature processing of ion-implanted epitaxial silicon.
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Effect of Growth Temperature on the Catalyst-Free Growth of Long Silicon Nanowires Using Radio Frequency Magnetron Sputtering

Soumen Dhara, +1 more
- 01 Feb 2011 - 
TL;DR: In this paper, the authors have grown metal catalyst free, straight Si nanowires (NWs) with high aspect ratio of about 130 on Si(100) substrate using radio frequency magnetron sputtering.
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Strain dependence of the nonlinear optical properties of strained Si nanoparticles

Soumen Dhara, +3 more
- 01 Jul 2014 - 
TL;DR: The strain-dependent observed changes in the NLO parameters ofSi NPs are found to be advantageous for application purpose, and it is explained on the basis of strain-induced modification in the electronic structure of the highest occupied molecular orbital and lowest unoccupied molecular orbital states of Si NPs.