P
Padhraic Mulligan
Researcher at Oak Ridge National Laboratory
Publications - 19
Citations - 5764
Padhraic Mulligan is an academic researcher from Oak Ridge National Laboratory. The author has contributed to research in topics: Gallium nitride & Particle detector. The author has an hindex of 9, co-authored 16 publications receiving 4424 citations. Previous affiliations of Padhraic Mulligan include Ohio State University.
Papers
More filters
Journal ArticleDOI
Electron-hole diffusion lengths > 175 μm in solution-grown CH3NH3PbI3 single crystals
TL;DR: It is found that the diffusion lengths in CH3NH3PbI3 single crystals grown by a solution-growth method can exceed 175 micrometers under 1 sun (100 mW cm−2) illumination and exceed 3 millimeters under weak light for both electrons and holes.
Journal ArticleDOI
Sensitive X-ray detectors made of methylammonium lead tribromide perovskite single crystals
Haotong Wei,Yanjun Fang,Yanjun Fang,Padhraic Mulligan,William Chuirazzi,Hong-Hua Fang,Congcong Wang,Benjamin Ecker,Yongli Gao,Yongli Gao,Maria Antonietta Loi,Lei Cao,Jinsong Huang +12 more
TL;DR: In this paper, single-crystal perovskite devices 2-3 mm thick exhibit 16.4% X-ray detection efficiency with sensitivity four times higher than α-Se detectors.
Journal ArticleDOI
Review of using gallium nitride for ionizing radiation detection
TL;DR: In this article, GaN has been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection with the largest band gap energy of all commercial semiconductors, and has found wide application in the making of optoelectronic devices.
Journal ArticleDOI
Measurement of internal conversion electrons from Gd neutron capture
TL;DR: In this article, the IC electron spectrum due to Gd neutron capture was measured using a thermal neutron beam and a digitizer-based multidetector spectroscopy.
Journal ArticleDOI
Evaluation of freestanding GaN as an alpha and neutron detector
TL;DR: In this article, the authors demonstrated the feasibility of ionizing radiation detectors created from significantly thicker freestanding n-type gallium nitride (GaN), grown via hydride vapor phase epitaxy (HVPE).