P
Pai-Yu Chen
Researcher at Arizona State University
Publications - 60
Citations - 4686
Pai-Yu Chen is an academic researcher from Arizona State University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 29, co-authored 60 publications receiving 3246 citations. Previous affiliations of Pai-Yu Chen include University of Texas at Austin.
Papers
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Journal ArticleDOI
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
Shinhyun Choi,Scott H. Tan,Zefan Li,Yunjo Kim,Chanyeol Choi,Pai-Yu Chen,Han-Wool Yeon,Shimeng Yu,Jeehwan Kim +8 more
TL;DR: This work demonstrates analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium.
Journal ArticleDOI
Emerging Memory Technologies: Recent Trends and Prospects
Shimeng Yu,Pai-Yu Chen +1 more
TL;DR: This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change randomAccess memory (PCRAM), and resistive random accessMemory (RRAM).
Proceedings ArticleDOI
Ferroelectric FET analog synapse for acceleration of deep neural network training
TL;DR: A transient Presiach model is developed that accurately predicts minor loop trajectories and remnant polarization charge for arbitrary pulse width, voltage, and history of FeFET synapses and reveals a 103 to 106 acceleration in online learning latency over multi-state RRAM based analog synapses.
Journal ArticleDOI
NeuroSim: A Circuit-Level Macro Model for Benchmarking Neuro-Inspired Architectures in Online Learning
TL;DR: NeuroSim, a circuit-level macro model that estimates the area, latency, dynamic energy, and leakage power to facilitate the design space exploration of neuro-inspired architectures with mainstream and emerging device technologies is developed.
Journal ArticleDOI
Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design
Pai-Yu Chen,Shimeng Yu +1 more
TL;DR: In this paper, a model for metaloxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics is presented, which relies on the dynamics of conductive filament growth/dissolution in the oxide layer.