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Paolo Musumeci

Researcher at University of Catania

Publications -  85
Citations -  1834

Paolo Musumeci is an academic researcher from University of Catania. The author has contributed to research in topics: Ion & Irradiation. The author has an hindex of 23, co-authored 82 publications receiving 1561 citations. Previous affiliations of Paolo Musumeci include STMicroelectronics.

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Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide

TL;DR: In this article, the interfacial reaction and phase formation as a function of the annealing temperature (600-1000°C) and time were investigated on both titanium and nickel thin films evaporated on n-type 6H-SiC (0001) substrate.
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Strongly enhanced light trapping in a two-dimensional silicon nanowire random fractal array.

TL;DR: It is shown that the random fractal structure of the nanowire array is responsible for a strong in-plane multiple scattering, which is related to the material refractive index fluctuations and leads to a greatly enhanced Raman scattering and a bright photoluminescence.
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Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

TL;DR: In this article, the effects of surface preparation and thermal annealing on the Ni/6H-SiC Schottky barrier height were studied by monitoring the forward I-V characteristics of Schotty diodes, and the ideality factor n and the barrier height ΦB were found strongly dependent on the impurity species present at the metal/SiC interface.
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Identification of extracellular vesicles and characterization of miRNA expression profiles in human blastocoel fluid

TL;DR: 91 microRNAs, expressed at different levels, able to regulate critical signaling pathways controlling embryo development, such as pluripotency, cell reprogramming, epigenetic modifications, intercellular communication, cell adhesion and cell fate are found.
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Schottky--ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?

TL;DR: The transition from Schottky to ohmic contact in the nickel silicide/SiC system during annealing from 600 to 950 °C was investigated by measuring the electrical properties of the contact and by analyzing the microstructure of the silicide and SiC interface as mentioned in this paper.