Lucia Calcagno

TL;DR: The atomic and electronic structure of polymer films undergoes deep modifications during high energy (keV-MeV) ion irradiation, from molecular solid to amorphous material as discussed by the authors, and the concentration of trigonal carbon (sp 2 ) in the polymer changes with ion fluence (10 11 −10 14 ions cm 2 ) and stabilizes to a value of 20% independently on the initial chemical structure of the irradiated sample.

TL;DR: In this article, the interfacial reaction and phase formation as a function of the annealing temperature (600-1000°C) and time were investigated on both titanium and nickel thin films evaporated on n-type 6H-SiC (0001) substrate.

TL;DR: In this article, the effects of surface preparation and thermal annealing on the Ni/6H-SiC Schottky barrier height were studied by monitoring the forward I-V characteristics of Schotty diodes, and the ideality factor n and the barrier height ΦB were found strongly dependent on the impurity species present at the metal/SiC interface.

TL;DR: Schottky diodes have been manufactured on the epitaxial layer of 4H-SiC epilayers with trichlorosilane instead of silane as the silicon precursor.

TL;DR: The transition from Schottky to ohmic contact in the nickel silicide/SiC system during annealing from 600 to 950 °C was investigated by measuring the electrical properties of the contact and by analyzing the microstructure of the silicide and SiC interface as mentioned in this paper.