F
F. La Via
Researcher at National Research Council
Publications - 197
Citations - 2895
F. La Via is an academic researcher from National Research Council. The author has contributed to research in topics: Silicon & Annealing (metallurgy). The author has an hindex of 25, co-authored 173 publications receiving 2597 citations.
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Journal ArticleDOI
Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide
TL;DR: In this article, the interfacial reaction and phase formation as a function of the annealing temperature (600-1000°C) and time were investigated on both titanium and nickel thin films evaporated on n-type 6H-SiC (0001) substrate.
Journal ArticleDOI
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay
Francesco Cappuzzello,Francesco Cappuzzello,C. Agodi,Manuela Cavallaro,Diana Carbone,Salvatore Tudisco,D. Lo Presti,D. Lo Presti,J. R. B. Oliveira,Paolo Finocchiaro,Maria Colonna,Danilo Rifuggiato,Luciano Calabretta,Daniela Calvo,Luciano Pandola,L. Acosta,Naftali Auerbach,Jessica I. Bellone,Jessica I. Bellone,Roelof Bijker,Danilo Bonanno,D. Bongiovanni,Thereza Borello-Lewin,Ismail Boztosun,O. Brunasso,S. Burrello,S. Burrello,Salvatore Calabrese,Salvatore Calabrese,A. Calanna,E. R. Chávez Lomelí,Grazia D'Agostino,Grazia D'Agostino,P. N. de Faria,G. De Geronimo,Franck Delaunay,Franck Delaunay,N. N. Deshmukh,J. L. Ferreira,Maria Fisichella,A. Foti,Giuseppe Gallo,Giuseppe Gallo,H. Garcia-Tecocoatzi,H. Garcia-Tecocoatzi,Vincenzo Greco,Vincenzo Greco,A. Hacisalihoglu,A. Hacisalihoglu,Felice Iazzi,Felice Iazzi,Riccardo Introzzi,Riccardo Introzzi,G. Lanzalone,J. A. Lay,J. A. Lay,F. La Via,Horst Lenske,Roberto Linares,G. Litrico,Fabio Longhitano,J. Lubian,Nilberto H. Medina,D. R. Mendes,Mauricio Moralles,Annamaria Muoio,A. Pakou,H. Petrascu,Federico Pinna,Federico Pinna,S. Reito,A. D. Russo,G.V. Russo,G.V. Russo,G. Santagati,Elena Santopinto,R. B. B. Santos,O. Sgouros,O. Sgouros,M. A. G. da Silveira,S. O. Solakci,G. A. Souliotis,V. Soukeras,V. Soukeras,Alessandro Spatafora,Alessandro Spatafora,D. Torresi,R. Magana Vsevolodovna,R. Magana Vsevolodovna,Akın Yıldırım,V. A. B. Zagatto +90 more
TL;DR: The NUMEN project as mentioned in this paper proposes an innovative technique to access the nuclear matrix elements entering the expression of the lifetime of the double beta decay by cross section measurements of heavy-ion induced Double Charge Exchange (DCE) reactions.
Journal ArticleDOI
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay
Francesco Cappuzzello,C. Agodi,Manuela Cavallaro,Diana Carbone,Salvatore Tudisco,D. Lo Presti,J. R. B. Oliveira,Paolo Finocchiaro,Maria Colonna,Danilo Rifuggiato,Luciano Calabretta,Daniela Calvo,Luciano Pandola,L. Acosta,Naftali Auerbach,J. I. Bellone,Roelof Bijker,Danilo Bonanno,D. Bongiovanni,Thereza Borello-Lewin,Ismail Boztosun,O. Brunasso,S. Burrello,Salvatore Calabrese,A. Calanna,E. R. Chávez Lomelí,Grazia D'Agostino,P. N. de Faria,G. De Geronimo,Franck Delaunay,N. N. Deshmukh,J. L. Ferreira,Maria Fisichella,A. Foti,Giuseppe Gallo,H. Garcia,Vincenzo Greco,A. Hacisalihoglu,Felice Iazzi,Riccardo Introzzi,G. Lanzalone,J. A. Lay,F. La Via,H. Lenske,Roberto Linares,Grazia Litrico,Fabio Longhitano,J. Lubian,Nilberto H. Medina,D. R. Mendes,Mauricio Moralles,Annamaria Muoio,A. Pakou,H. Petrascu,Federico Pinna,S. Reito,A. D. Russo,G. V. Russo,G. Santagati,Elena Santopinto,R. B. B. Santos,O. Sgouros,M. A. G. da Silveira,S. O. Solakci,G. A. Souliotis,V. Soukeras,Alessandro Spatafora,D. Torresi,R. Magana Vsevolodovna,V. A. B. Zagatto,A. Yildirin +70 more
TL;DR: The main achievements of the NUMEN project together with an updated and detailed overview of the related R&D activities and theoretical developments are described in this paper, where an innovative technique to access the nuclear matrix elements entering the expression of the lifetime of the double beta decay by cross section measurements of heavy-ion induced Double Charge Exchange (DCE) reactions is proposed.
Journal ArticleDOI
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
F. La Via,Andrea Severino,Ruggero Anzalone,Corrado Bongiorno,Grazia Litrico,Marco Mauceri,M. Schoeler,Philipp Schuh,Peter J. Wellmann +8 more
TL;DR: In this paper, the effect of the growth process on the formation of defects in the hetero-epitaxial 3C-SiC film and the possible path for defects reduction has been reported.
Journal ArticleDOI
Mechanisms of growth and defect properties of epitaxial SiC
TL;DR: In this paper, a review of the development and history of the epitaxial growth of 4H-SiC is presented, and the influence of different growth parameters on the surface morphology (step-bunching) and the correlation with defects are reviewed.