Showing papers in "Microelectronic Engineering in 2002"

TL;DR: In this article, the authors compare the electrical properties of carbon nanotubes with equivalent metal wires made of gold and describe their progress in process integration, and propose a multi-walled carbon-nanotubes as an interconnect material of the future.

TL;DR: Fundamentals of PDMS-based microfluidic devices and their functions are described as well as the experimental results, where microreactors, microchips for capillary gel electrophoresis, and hydrophobic vent valves are successfully fabricated and operated.

TL;DR: In this article, the authors explained the NiSi salicide technology and showed that NiSi has several advantages over TiSi2 and CoSi2 for the ultra-small CMOS process, including low temperature silicidation process, low silicon consumption, no bridging failure property, smaller mechanical stress, no adverse narrow line effect on sheet resistance, smaller contact resistance for both n- and p-Si, and higher activation rate of B for SiGe poly gate electrode.

TL;DR: In this article, the authors demonstrate that the deposition procedure as well as the environment during deposition are important with respect to the quality and performance of the molecular layer of a polymer stamp and demonstrate that a stamp rich in small structures will effectively show a surface area enlargement, which leads to adhesion of the polymer to the stamp.

TL;DR: In this paper, a focused ion beam was used to fabricate the microlens cavities on three materials, with silicon showing the best result, and the temperature of the mold and the embossing force were the two parameters varied.

TL;DR: In this article, the results of comparative analysis of different instrumentations are presented, including ellipsometric porosimetry, small-angle neutron and X-ray scattering combined with specular Xray reflectivity and positron annihilation lifetime spectroscopy.

TL;DR: In this article, the authors evaluate tantalum nitride thin films fabricated using reactive sputtering with adjusted deposition parameters and determine the value of temperature coefficient of resistance (TCR) determined for the Ta2N resistor was - 103 ppm/°C.

TL;DR: A review of physical and chemical removal options is discussed with data on the most promising options shown in this paper, where initial mechanical properties of electroplated Ni tensile specimens subsequent to the salt bath and DCE processing are presented.

TL;DR: In this article, the interfacial reaction and phase formation as a function of the annealing temperature (600-1000°C) and time were investigated on both titanium and nickel thin films evaporated on n-type 6H-SiC (0001) substrate.

TL;DR: In this article, the role of secondary electrons in the spatial evolution of electron-beam-induced-deposition (EBID) dots has been investigated and it was shown that the secondary electrons are indeed responsible for the shapes and sizes observed during EBID.

TL;DR: In this paper, the linear motion of a microactuator is converted into a rotational gripping motion by a system of elastic spring beams, and the gripper tweezers are closed at a voltage of 90 V.

TL;DR: In this article, two techniques for the fabrication of novel microfluidic devices for electrokinetic fluid pumping are presented, which consist of forming a micro-channel and reservoirs on a transparent cover sheet and patterning an array of interdigitated asymmetric micro-electrodes on a flat substrate.

TL;DR: In this article, the authors investigated the materials formed by Ag photodiffusion in Se-rich Ge-Se thin glass films and found that the amount of Ag that can be incorporated by this method saturates at a level dependent on the quantity of Se in the starting glass.

TL;DR: In this article, the resist and mold were modified with a fluorine-based additive, which migrates to the surface during spin-on processes creating a low energy surface, and the anti-adhesion layer on the mold was characterized by electron spectroscopy for micro-analysis (ESMA).

TL;DR: In this article, an ultrasonically assisted development was used to improve resolution and line edge roughness in PMMA resist with 3:7 water/IPA developer, and the results showed improvements in sensitivity (∼40%), contrast, exposure dose latitude, roughness and resolution.

TL;DR: In this article, the authors investigate alternative processes for defining features on an SFIL template using a much thinner template, which has the advantage that the template is transparent, thereby facilitating conventional overlay techniques.

TL;DR: In this article, an experimental set-up is presented, that allows in situ scanning electron microscope (SEM) investigations of the progress of electromigration damage in fully embedded copper interconnect structures.

TL;DR: In this paper, the performance of carbon nanotube field effect transistors was compared with state-of-the-art silicon MOSFETs with high-k dielectric materials such as HfO2.

TL;DR: In this paper, the feasibility of fabrication of sub-50 nm copper interconnects was demonstrated and a process flow to obtain wires with line widths far below the limits given by lithography using a removable spacer technique was developed for copper damascene lines.

TL;DR: In the latest edition of the International Technology Roadmap for Semiconductors (ITRS), the predicted time for the introduction of porous ultra low-k materials with a dielectric constant of 2.2 has slipped significantly against earlier predictions as mentioned in this paper.

TL;DR: In this paper, the authors describe the general method of preparation of such naked and beaded nanowires as well as how may these wires can be manipulated to make electronic devices.

TL;DR: The proposed DiVa (Distributed Variable shaped beam system) is projected to be capable of writing at a speed of 5.2 cm 2 /s with 1000 shaped beams, if this can be achieved in practice, it will open up the possibility of mainstream manufacturing of VLSI circuits using maskless e-beam lithography.

TL;DR: In this article, planar and etched silicon substrates were deposited by the hydrogen-assisted reduction of a series of copper(I)(hfac)L compounds using a cold wall, high pressure reactor, which yielded high purity films with exceptional step coverage in features as narrow as 100 nm with an aspect ratio of eight.

TL;DR: In this paper, it was shown that the redeposition of partially dissolved resist during drying after development leads to feature degradation, which is likely the limiting factor in the practical resolution of final features from proximity UV printing.

TL;DR: Copper films were deposited in supercfitical carbon dioxide through hydrogen reduction of Cu(hfac)2 at pressures of 10-15 MPa and temperatures of 250-400°C as mentioned in this paper.

TL;DR: In this article, the authors designed and fabricated the first miniaturized cyclic polymerase chain reaction (PCR) device in low-temperature co-fired ceramics.

TL;DR: A range of mesoporous xerogel low-k dielectric films were prepared and characterised using complementary techniques: Laser-generated surface acoustic waves, ellipsometric porosimetry, Rutherford backscattering and nanoindentation as mentioned in this paper.

TL;DR: In this paper, the impact of thin films made of organic semiconductors (α-sexithiophene, PDAS and PBAS) on morphology was studied by optical, atomic force and electron microscopy.

TL;DR: In this paper, four next generation lithographic options (EUV, X-ray, EPL, IPL) are compared against four current optical technologies (i-line, DUV, 193 nm, 157 nm) for resolution capabilities based on wavelength.

TL;DR: In this paper, a process for the fabrication of suspended silicon microstructures, such as cantilevers and open type membranes, constituting the movable plate of a capacitor at a small distance over the silicon substrate is presented.