There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications--for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low-consumption, solid-state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm(-2) up to 50 K. These results are very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.

Terahertz semiconductor heterostructure laser

This article reviews recent theoretical and experimental advances in the fundamental understanding and active control of quantum fluids of light in nonlinear optical systems. In the presence of effective photon-photon interactions induced by the optical nonlinearity of the medium, a many-photon system can behave collectively as a quantum fluid with a number of novel features stemming from its intrinsically nonequilibrium nature. A rich variety of recently observed photon hydrodynamical effects is presented, from the superfluid flow around a defect at low speeds, to the appearance of a Mach-Cherenkov cone in a supersonic flow, to the hydrodynamic formation of topological excitations such as quantized vortices and dark solitons at the surface of large impenetrable obstacles. While the review is mostly focused on a specific class of semiconductor systems that have been extensively studied in recent years (planar semiconductor microcavities in the strong light-matter coupling regime having cavity polaritons as elementary excitations), the very concept of quantum fluids of light applies to a broad spectrum of systems, ranging from bulk nonlinear crystals, to atomic clouds embedded in optical fibers and cavities, to photonic crystal cavities, to superconducting quantum circuits based on Josephson junctions. The conclusive part of the article is devoted to a review of the future perspectives in the direction of strongly correlated photon gases and of artificial gauge fields for photons. In particular, several mechanisms to obtain efficient photon blockade are presented, together with their application to the generation of novel quantum phases.

Quantum fluids of light

This paper reviews the application of coherent acoustic phonons in the form of piezoelectrically-generated surface acoustic waves to control the response of integrated photonic acousto-optic waveguide structures. We first address the fundamental properties of the acoustic fields in piezoelectric materials as well as the piezoelectric generation of surface acoustic waves using interdigital transducers. The mechanism responsible for the interaction between light and the acoustic modes in the photonic waveguide structures and the modulation of the response of the devices is carefully reviewed. Next, we discuss the most important developments in the field of integrated acousto-optical device applications, with focus on devices built upon three-dimensional optical waveguides. Finally, prospects for acousto-optic device applications by use of surface acoustic waves are summarized.

Optical waveguide devices modulated by surface acoustic waves

Frequency gaps for acoustic phonons with a propagation direction oblique to the superlattice layers are investigated using phonon transmission spectroscopy in amorphous superlattices. In addition to the gaps at the center and at the boundaries of the superlattice mini-Brillouin-zone, the phonon transmission spectra show gaps associated with stop bands for coupled phonon modes with mixed longitudinal and transverse character. The position of the gaps is well explained by a description of the phonons in the elastic continuum limit.

Experimental evidence for coupled-mode phonon gaps in superlattice structures.

We investigate the acousto-electric transport induced by surface acoustic waves (SAWs) in epitaxial graphene (EG) coated by a MgO/ZnO film. The deposition of a thin MgO layer protects the EG during the sputtering of a piezoelectric ZnO film for the efficient generation of SAWs. We demonstrate by Raman and electric measurements that the coating does not harm the EG structural and electronic properties. We report the generation of two SAW modes with frequencies around 2 GHz. For both modes, we measure acousto-electric currents in EG devices placed in the SAW propagation path. The currents increase linearly with the SAW power, reaching values up to almost two orders of magnitude higher than in previous reports for acousto-electric transport in EG on SiC. Our results agree with the predictions from the classical relaxation model of the interaction between SAWs and a two dimensional electron gas.

Acousto-electric transport in MgO/ZnO-covered graphene on SiC

We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and biexciton confined in the probed nanowire quantum dot. When the nanowire is perturbed by the propagating acoustic wave, the embedded quantum dot is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling. Depending on the recombination lifetime of the involved optical transitions, we can resolve acoustically driven radiative processes over time scales defined by the acoustic cycle. At high acoustic amplitudes, we also observe distortions in the transmitted acoustic waveform, which are reflected in the time-dependent spectral response of our sensor quantum dot. In addition, the correlated intensity oscillations observed during temporal decay of the exciton and biexciton emission suggest an effect of the acoustic piezoelectric fields on the quantum dot charge population. The present results are relevant for the dynamic spectral and temporal control of photon emission in III-nitride semiconductor heterostructures.

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Spatially resolved photoluminescence spectroscopy was employed to investigate the dynamic control of excitons in GaAs/AlGaAs double quantum wells within the confined and moving potentials formed by the interference of orthogonal surface acoustic waves. We demonstrate the unique ability of these dynamic strain dots to transport photogenerated indirect excitons over macroscopic distances.

Paulo V. Santos

Papers

Optical waveguide devices modulated by surface acoustic waves

Experimental evidence for coupled-mode phonon gaps in superlattice structures.

Acousto-electric transport in MgO/ZnO-covered graphene on SiC

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Exciton transport by moving strain dots in GaAs quantum wells