Pavel L. Komarov

TL;DR: In this paper, an experimental system capable of noninvasively and nondestructively scanning the transient surface temperature of pulsed microelectronic devices with submicron spatial and sub-microsecond temporal resolutions is presented.

TL;DR: In this article, a transient thermo-reflectance system has been employed to measure the thermal characteristics of thin-film SiO/sub 2/ layers, and the intrinsic thermal conductivity is independent of thickness and smaller than the traditionally reported value of bulk silicon dioxide.

TL;DR: In this paper, a new analytical solution to the transient diffusion equation with simultaneous surface and volumetric heating, found using fractional calculus, is presented in a semi-derivative form.

TL;DR: In this article, the authors used a substrate replacement process in which a thick diamond substrate is grown by chemical vapor deposition following removal of the original Si substrate, and measured average and maximum temperatures in the gate-drain access region were 176 °C and 205 °C, respectively.

TL;DR: The results indicate a gain of approximately 55% in the thermal conductivity of Si 28 as compared to that of natural Si, at both low and higher levels of doping, and a loss of approximately 19% for both types of silicon due to the higher level of doping.