P
Pawan Mishra
Researcher at King Abdullah University of Science and Technology
Publications - 20
Citations - 489
Pawan Mishra is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 10, co-authored 19 publications receiving 375 citations. Previous affiliations of Pawan Mishra include National Tsing Hua University & Khalifa University.
Papers
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Journal ArticleDOI
Optical constants of CH 3 NH 3 PbBr 3 perovskite thin films measured by spectroscopic ellipsometry.
Mohd Sharizal Alias,Ibrahim Dursun,Makhsud I. Saidaminov,Elhadj M. Diallo,Pawan Mishra,Tien Khee Ng,Osman M. Bakr,Boon S. Ooi +7 more
TL;DR: The precise measurement of optical constants will be useful in designing optical devices using CH 3 NH 3 PbBr 3 thin films using spectroscopic ellipsometry.
Journal ArticleDOI
Determination of band offsets at GaN/single-layer MoS2 heterojunction
Malleswararao Tangi,Pawan Mishra,Tien Khee Ng,Mohamed N. Hedhili,Bilal Janjua,Mohd Sharizal Alias,Dalaver H. Anjum,Chien Chi Tseng,Yumeng Shi,Hannah J. Joyce,Lain-Jong Li,Boon S. Ooi +11 more
TL;DR: In this paper, the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure were determined by high-resolution X-ray photoelectron spectroscopy.
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Band Alignment at GaN/Single-Layer WSe2 Interface
Malleswararao Tangi,Pawan Mishra,Chien-Chih Tseng,Tien Khee Ng,Mohamed N. Hedhili,Dalaver H. Anjum,Mohd Sharizal Alias,Nini Wei,Lain-Jong Li,Boon S. Ooi +9 more
TL;DR: The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
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Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs
Pawan Mishra,Bilal Janjua,Tien Khee Ng,Chao Shen,Abdelmajid Salhi,Ahmed Y. Alyamani,Munir M. El-Desouki,Boon S. Ooi +7 more
TL;DR: In this paper, the authors investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron blocking layer (EBL) and showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design.
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Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy
Pawan Mishra,Malleswararao Tangi,Tien Khee Ng,Mohamed N. Hedhili,Dalaver H. Anjum,Mohd Sharizal Alias,Chien-Chih Tseng,Lain-Jong Li,Boon S. Ooi +8 more
TL;DR: In this paper, a p-type monolayer (ML) MoS2 and intrinsic GaN/p-type MoS 2 heterojunction was realized by the GaN overgrowth on ML-MoS2/c-sapphire using the plasma-assisted molecular beam epitaxy.