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Abdelmajid Salhi

Researcher at University of Manchester

Publications -  82
Citations -  1174

Abdelmajid Salhi is an academic researcher from University of Manchester. The author has contributed to research in topics: Quantum dot & Laser. The author has an hindex of 22, co-authored 78 publications receiving 1065 citations. Previous affiliations of Abdelmajid Salhi include IBM & University of Montpellier.

Papers
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Abundant non-toxic materials for thin film solar cells: Alternative to conventional materials

TL;DR: In this paper, the results of a comparative analysis to identify abundant, non-toxic binary materials with potential applicability for photovoltaics are presented, based on the materials' bulk properties and a set of environmental, physical, and chemical criteria.
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Looking into the volcano with a Mid-IR DFB diode laser and Cavity Enhanced Absorption Spectroscopy.

TL;DR: The emission from the most active fumarole at the Solfatara volcano near Naples (Italy) was probed for the presence of CO and CH(4), which found the concentrations to be about 3 ppm and 75 ppm, respectively, while actual detection limits for these molecules are around 1 ppb.
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Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

TL;DR: In this paper, the authors investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron blocking layer (EBL) and showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design.
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Fabrication of force sensors based on two-dimensional photonic crystal technology

TL;DR: In this paper, a photonic crystal (PhC) strain-sensitive structure is proposed to realize a force/pressure optical sensor by designing a bulk GaAs/AlGaAs microcavity operating in the wavelength range 1300-1400nm, where the resonant wavelength shifts its spectral position following a linear behavior when a pressure ranging between 0.25Gpa and 5GPa is applied.
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Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m

TL;DR: In this paper, the temperature dependence of the threshold current of InGaAsSb/AlGaSb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures.