Paul A. Zimmerman

TL;DR: In this article, the authors developed new inorganic nanocomposite photoresists with significantly higher etch resistance than the usual polymer-based photoresist, which can provide several advantages to conventional chemically amplified resist(CAR) systems, including improved depth of focus (DOF) and reduced line edge roughness.

TL;DR: In this article, the authors review the successes and failures of the search for high-index materials for the generation-three lens element and photo-resistor for the half-pitch node.

TL;DR: A preliminary Quantitative Structure Property Relationship (QSPR) model for predicting the refractive index of small molecules and polymers at 193 nm is presented in this article, which is useful for screening databases of commercially available compounds for high refractive-index targets.

TL;DR: In this article, a systematic approach has been used to increase the sulfur content of 193 nm type resist polymers, by synthesis of sulfur-containing monomers and by performing bulk modifications of the polymer.

TL;DR: In this article, the authors describe the trade-offs of the candidate technologies for 22nm and beyond and specifically the efforts of several groups to extend 193nm immersion lithography, including non-chemically amplified photoresist systems.