Large-scale superconducting electric devices for power industry depend critically on wires with high critical current densities at temperatures where cryogenic losses are tolerable This restricts choice to two high-temperature cuprate superconductors, (Bi,Pb)2Sr2Ca2Cu3Ox and YBa2Cu3Ox, and possibly to MgB2, recently discovered to superconduct at 39 K Crystal structure and material anisotropy place fundamental restrictions on their properties, especially in polycrystalline form So far, power applications have followed a largely empirical, twin-track approach of conductor development and construction of prototype devices The feasibility of superconducting power cables, magnetic energy-storage devices, transformers, fault current limiters and motors, largely using (Bi,Pb)2Sr2Ca2Cu3Ox conductor, is proven Widespread applications now depend significantly on cost-effective resolution of fundamental materials and fabrication issues, which control the production of low-cost, high-performance conductors of these remarkable compounds

High-Tc superconducting materials for electric power applications.

Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

https://iopscience.iop.org/article/10.7567/JJAP.54.040103/pdf

Material science and device physics in SiC technology for high-voltage power devices

The excitation of surface-phonon-polariton (SPhP) modes in polar dielectric crystals and the associ- ated new developments in the field of SPhPs are reviewed. The emphasis of this work is on providing an understand- ing of the general phenomenon, including the origin of the Reststrahlen band, the role that optical phonons in polar dielectric lattices play in supporting sub-diffrac- tion-limited modes and how the relatively long opti- cal phonon lifetimes can lead to the low optical losses observed within these materials. Based on this overview, the achievements attained to date and the potential tech- nological advantages of these materials are discussed for localized modes in nanostructures, propagating modes on surfaces and in waveguides and novel metamaterial designs, with the goal of realizing low-loss nanophoton- ics and metamaterials in the mid-infrared to terahertz spectral ranges.

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices. Careful consideration of the thermal conditions in which SiC [0001] is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes), inclusions, small-angle boundaries and long-range lattice warp has been reduced. But some macroscopic defects (about 1-10 cm(-2)) and a large density of elementary dislocations (approximately 10(4) cm(-2)), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12-16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth), to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems.

/pdf/ultrahigh-quality-silicon-carbide-single-crystals-s6wgtjd2tk.pdf

Ultrahigh-quality silicon carbide single crystals

Only a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups utilizing varied approaches and subsequent progress in both fundamental understanding of this phenomenon and its elimination. The degradation of SiC p-i-n junctions is now well documented to be due to the expansion of Shockley-type stacking faults in the part of the devices reached by the electron-hole plasma. The faults can gradually cover most of the junction area, impeding current flow and, as a result, increasing the on-state resistance. While in most semiconductors stacking faults are electrically inactive, in hexagonal silicon carbide polytypes (4H- and 6H-SiC) they form quantum-well-like electron states observed in luminescence and confirmed by first-principles calculations. The stacking-fault expansion occurs via motion of 30° sil...

Degradation of hexagonal silicon-carbide-based bipolar devices

Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

Long term operation of 4.5kV PiN and 2.5kV JBS diodes

We have studied weak links and dc–SQUIDs made from pulsed laser deposited YBa2Cu3O7−δ thin films on Y–ZrO2 bicrystal substrates. The transport properties of the weak links were studied as a function of the misorientation angle (θ) between the two halves of the bicrystal and an exponential dependence of the weak link critical current density was observed for angles up to 40° at 77 K. Josephson effects with clear microwave and magnetic field responses were observed. An optimum dc–SQUID performance at 77 K was obtained for θ=32°. At this temperature, we achieved a periodic magnetic field response with a modulation depth of 12 μV.

Weak links and dc SQUIDS on artificial nonsymmetric grain boundaries in YBa2Cu3O7−δ

The European Spallation Source Design

We have studied weak links and dc-SQUIDs made from pulsed laser deposited YBa2Cu3O7-δ thin films on Y-ZrO 2 bicrystal substrates. The transport properties of the weak links were studied as a function of the misorientation angle (θ) between the two halves of the bicrystal and an exponential dependence of the weak link critical current density was observed for angles up to 40°at 77 K. Josephson effects with clear microwave and magnetic field responses were observed. An optimum dc-SQUID performance at 77 K was obtained for θ=32°. At this temperature, we achieved a periodic magnetic field response with a modulation depth of 12 μV.

Per-Åke Nilsson

Papers

Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

Long term operation of 4.5kV PiN and 2.5kV JBS diodes

Weak links and dc SQUIDS on artificial nonsymmetric grain boundaries in YBa2Cu3O7−δ

The European Spallation Source Design

Weak links and dc SQUIDS on artificial nonsymmetric grain boundaries in YBa2Cu3O7-δ