P
Per Ohlckers
Researcher at Sewanee: The University of the South
Publications - 70
Citations - 818
Per Ohlckers is an academic researcher from Sewanee: The University of the South. The author has contributed to research in topics: Photodiode & Silicon. The author has an hindex of 14, co-authored 65 publications receiving 710 citations. Previous affiliations of Per Ohlckers include University of Oslo & SINTEF.
Papers
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Micro- and Nano-Air Vehicles: State of the Art
TL;DR: A review of the current state of the art and identifying the challenges of design and fabrication of micro-and nano-air vehicles is provided in this article. But the main advantages and drawbacks for each typology are identified and discussed.
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Silicon-to-silicon anodic bonding with a borosilicate glass layer
TL;DR: In this article, a reliable process for silicon-to-silicon anodic bonding is described and data concerning yield and bonding strength are given, and different sputter deposited and annealed Pyrex 7740 layers are evaluated as sealing material.
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An integrated capacitive pressure sensor with frequency-modulated output
TL;DR: In this paper, the first measurements of an integrated capacitive silicon pressure sensor with frequency-modulated output were described, where the sensing element is a variable-gap capacitor located between two silicon chips, one chip having a pressure sensitive diaphragm and the other chip containing a bipolar integrated circuit for signal conditioning.
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Nano fabricated silicon nanorod array with titanium nitride coating for on-chip supercapacitors
Pai Lu,Per Ohlckers,Lutz Müller,Steffen Leopold,Martin Hoffmann,Kestutis Grigoras,Jouni Ahopelto,Mika Prunnila,Xuyuan Chen +8 more
TL;DR: In this article, high aspect ratio silicon nanorod arrays by cyclic deep reactive ion etching (DRIE) process as a scaffold to enhance the energy density of a Si-based supercapacitor.
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Particle-in-Cell Simulation and Optimization for a 220-GHz Folded-Waveguide Traveling-Wave Tube
TL;DR: In this paper, the beam-wave interaction and the electron beam dynamics were studied based on simulation results, and the influence of the beam tunnel, with respect to its transverse shape and size, on the circuit performance was investigated in detail.