scispace - formally typeset
P

Per Ohlckers

Researcher at Sewanee: The University of the South

Publications -  70
Citations -  818

Per Ohlckers is an academic researcher from Sewanee: The University of the South. The author has contributed to research in topics: Photodiode & Silicon. The author has an hindex of 14, co-authored 65 publications receiving 710 citations. Previous affiliations of Per Ohlckers include University of Oslo & SINTEF.

Papers
More filters
Journal ArticleDOI

Micro- and Nano-Air Vehicles: State of the Art

TL;DR: A review of the current state of the art and identifying the challenges of design and fabrication of micro-and nano-air vehicles is provided in this article. But the main advantages and drawbacks for each typology are identified and discussed.
Journal ArticleDOI

Silicon-to-silicon anodic bonding with a borosilicate glass layer

TL;DR: In this article, a reliable process for silicon-to-silicon anodic bonding is described and data concerning yield and bonding strength are given, and different sputter deposited and annealed Pyrex 7740 layers are evaluated as sealing material.
Journal ArticleDOI

An integrated capacitive pressure sensor with frequency-modulated output

TL;DR: In this paper, the first measurements of an integrated capacitive silicon pressure sensor with frequency-modulated output were described, where the sensing element is a variable-gap capacitor located between two silicon chips, one chip having a pressure sensitive diaphragm and the other chip containing a bipolar integrated circuit for signal conditioning.
Journal ArticleDOI

Nano fabricated silicon nanorod array with titanium nitride coating for on-chip supercapacitors

TL;DR: In this article, high aspect ratio silicon nanorod arrays by cyclic deep reactive ion etching (DRIE) process as a scaffold to enhance the energy density of a Si-based supercapacitor.
Journal ArticleDOI

Particle-in-Cell Simulation and Optimization for a 220-GHz Folded-Waveguide Traveling-Wave Tube

TL;DR: In this paper, the beam-wave interaction and the electron beam dynamics were studied based on simulation results, and the influence of the beam tunnel, with respect to its transverse shape and size, on the circuit performance was investigated in detail.