There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

Major developments, as well as remaining challenges and the associated research opportunities, are evaluated for three technologically distinct approaches to solar energy utilization: solar electricity, solar thermal, and solar fuels technologies. Much progress has been made, but research opportunities are still present for all approaches. Both evolutionary and revolutionary technology development, involving foundational research, applied research, learning by doing, demonstration projects, and deployment at scale will be needed to continue this technology-innovation ecosystem. Most of the approaches still offer the potential to provide much higher efficiencies, much lower costs, improved scalability, and new functionality, relative to the embodiments of solar energy-conversion systems that have been developed to date.

http://science.sciencemag.org/content/sci/351/6271/aad1920.full.pdf

Research opportunities to advance solar energy utilization

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.

https://iopscience.iop.org/article/10.1088/0022-3727/31/20/001/pdf

Growth and applications of Group III-nitrides

In the near future, grid operators are expected to regularly use advanced distributed energy resource (DER) functions, defined in IEEE 1547-2018, to perform a range of grid-support operations. Many of these functions adjust the active and reactive power of the device through commanded or autonomous operating modes which induce new stresses on the power electronics components. In this work, an experimental and theoretical framework is introduced which couples laboratory-measured component stress with advanced inverter functionality and derives a reduction in useful lifetime based on an applicable reliability model. Multiple DER devices were instrumented to calculate the additional component stress under multiple reactive power setpoints to estimate associated DER lifetime reductions. A clear increase in switch loss was demonstrated as a function of irradiance level and power factor. This is replicated in the system-level efficiency measurements, although magnitudes were different—suggesting other loss mechanisms exist. Using an approximate Arrhenius thermal model for the switches, the experimental data indicate a lifetime reduction of 1.5% when operating the inverter at 0.85 PF—compared to unity PF—assuming the DER failure mechanism thermally driven within the H-bridge. If other failure mechanisms are discovered for a set of power electronics devices, this testing and calculation framework can easily be tailored to those failure mechanisms.

/pdf/automating-component-level-stress-measurements-for-inverter-2fpqw4ib.pdf

Automating Component-Level Stress Measurements for Inverter Reliability Estimation

Silicon nitride deposited by direct plasma chemical vapor deposition (D-PECVD) and remote plasma chemical vapor deposition (R-PECVD) is tested in terms of minority carrier lifetime. Data shows that the minority carrier lifetime is improved with D-PECVD SiNx compared to RPCVD SiNx. Emitter wrap through (EWT) solar cell fabrication showed similar improvements in short-circuit current density Jsc and open-circuit voltage Voc. The best efficiency obtained on non-textured standard industrial multicrystalline silicon wafers is 16.9% with Jsc = 36.7 mA/cm2, Voc = 609 mV and fill factor FF = 75.4%. PC-1D fitting of the internal quantum efficiency (IQE) data shows front surface recombination velocity in the range of ∼9e4 cm/s. This efficiency can further be improved by incorporating texturing in the process steps.

Improved SiNx∶H passivation for industrial emitter-wrap-through multicrystalline silicon solar cells

Investigation of Correlation between Field Performance and Indoor Acceleration Measurements of Potential Induced Degradation (PID) for c-Si PV Modules

The "Framing" (local discoloration along cell edges) was induced by a simple sequential accelerated stress test (consisting of hygrothermal- and UV-stressors) applied to the PV modules with high OTR (oxygen transmission rate) backsheet, irrespective of the inclusion of UV-absorber in poly(ethylene-co-vinyl acetate) (EVA) encapsulant. UV-fluorescence imaging of the PV modules suggests that the spatially-inhomogeneous degradation of EVA material under UV-irradiating conditions is correlated to this "Framing" indicating an underlying common mechanism. These findings would contribute to the development of test procedures to broadly mimic the actual failures observed in fielded PV.

Reproducing the “Framing” by a Sequential Stress Test

Three crystalline silicon module designs were distributed in five replicas each to five laboratories for testing according to the IEC 62804 (Committee Draft) system voltage durability qualification test for crystalline silicon photovoltaic (PV) modules. The stress tests were performed in environmental chambers at 60 degrees C, 85% relative humidity, 96 h, and with module nameplate system voltage applied.

Peter Hacke

Papers

Automating Component-Level Stress Measurements for Inverter Reliability Estimation

Improved SiNx∶H passivation for industrial emitter-wrap-through multicrystalline silicon solar cells

Investigation of Correlation between Field Performance and Indoor Acceleration Measurements of Potential Induced Degradation (PID) for c-Si PV Modules

Reproducing the “Framing” by a Sequential Stress Test

Results of IEC 62804 Draft Round Robin Testing (Presentation)