There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

Major developments, as well as remaining challenges and the associated research opportunities, are evaluated for three technologically distinct approaches to solar energy utilization: solar electricity, solar thermal, and solar fuels technologies. Much progress has been made, but research opportunities are still present for all approaches. Both evolutionary and revolutionary technology development, involving foundational research, applied research, learning by doing, demonstration projects, and deployment at scale will be needed to continue this technology-innovation ecosystem. Most of the approaches still offer the potential to provide much higher efficiencies, much lower costs, improved scalability, and new functionality, relative to the embodiments of solar energy-conversion systems that have been developed to date.

http://science.sciencemag.org/content/sci/351/6271/aad1920.full.pdf

Research opportunities to advance solar energy utilization

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.

https://iopscience.iop.org/article/10.1088/0022-3727/31/20/001/pdf

Growth and applications of Group III-nitrides

Back-contact crystalline-silicon photovoltaic solar cells and modules offer a number of advantages including the elimination of grid shadowing losses, reduced cost by use of thinner silicon substrates, simpler module assembly, and improved aesthetics. While the existing method for interconnecting and stringing edge-connected back contact cells is acceptably straight-forward and reliable, there are further gains to be exploited when you have both contact polarities on one side of the cell. In this work, we produce ‘busbarless’ emitter wrap-through (EWT) solar cells that use about 65% less gridline Ag metallization mass compared to the edge tab design. Further, series resistance power losses are reduced by extraction of current from more places on the cell rear leading to a fill factor improvement of about 6% (relative) on the module level. Series resistance and current-generation losses associated with large rear bondpads and bus bars are eliminated. Use of thin Si wafers is enabled because of the reduced Ag metallization mass and by interconnection with conductive adhesives leading to reduced bow. The busbarless cell design interconnected with conductive adhesives passes International Electrotechnical Commission damp heat and thermal cycling tests.

Busbarless emitter wrap-through solar cells and modules

Continued growth of PV system deployment would be enhanced by quantitative, low-uncertainty predictions of the degradation and failure rates of PV modules and systems. The intended product lifetime (decades) far exceeds the product development cycle (months), limiting our ability to reduce the uncertainty of the predictions for this rapidly changing technology. Yet, business decisions (setting insurance rates, analyzing return on investment, etc.) require quantitative risk assessment. Moving toward more quantitative assessments requires consideration of many factors, including the intended application, consequence of a possible failure, variability in the manufacturing, installation, and operation, as well as uncertainty in the measured acceleration factors, which provide the basis for predictions based on accelerated tests. As the industry matures, it is useful to periodically assess the overall strategy for standards development and prioritization of research to provide a technical basis both for the standards and the analysis related to the application of those. To this end, this paper suggests a tiered approach to creating risk assessments. Recent and planned potential improvements in international standards are also summarized.

Qualification Testing versus Quantitative Reliability Testing of PV – Gaining Confidence in a Rapidly Changing Technology

A screen-printed interdigitated back contact cell using a boron-source diffusion barrier

Failure analysis of field-failed bypass diodes

The extent of potential-induced degradation of crystalline silicon modules in an environmental chamber is estimated using in-situ dark I-V measurements and applying superposition analysis. The dark I-V curves are shown to correctly give the module power performance at 200, 600 and 1,000 W/m2 irradiance conditions, as verified with a solar simulator. The onset of degradation measured in low light in relation to that under one sun irradiance can be clearly seen in the module design examined; the time to 5% relative degradation measured in low light (200 W/m2) was 28% less than that of full sun (1,000 W/m2 irradiance). The power of modules undergoing potential-induced degradation can therefore be characterized in the chamber, facilitating statistical analyses and lifetime forecasting.

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In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance

Peter Hacke

Papers

Busbarless emitter wrap-through solar cells and modules

Qualification Testing versus Quantitative Reliability Testing of PV – Gaining Confidence in a Rapidly Changing Technology

A screen-printed interdigitated back contact cell using a boron-source diffusion barrier

Failure analysis of field-failed bypass diodes

In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance