P
Péter Vancsó
Researcher at Université de Namur
Publications - 32
Citations - 1676
Péter Vancsó is an academic researcher from Université de Namur. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 14, co-authored 30 publications receiving 1176 citations. Previous affiliations of Péter Vancsó include Hungarian Academy of Sciences.
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Journal ArticleDOI
Room-temperature magnetic order on zigzag edges of narrow graphene nanoribbons
Gábor Zsolt Magda,Xiaozhan Jin,I. Hagymási,Péter Vancsó,Zoltán Osváth,Péter Nemes-Incze,Chanyong Hwang,László P. Biró,Levente Tapasztó +8 more
TL;DR: It is found that the magnetic order on graphene edges of controlled zigzag orientation can be stable even at room temperature, raising hopes of graphene-based spintronic devices operating under ambient conditions.
Journal ArticleDOI
Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions.
János Pető,Tamás Ollár,Péter Vancsó,Péter Vancsó,Zakhar I. Popov,Gábor Zsolt Magda,Gergely Dobrik,Chanyong Hwang,Pavel B. Sorokin,Levente Tapasztó +9 more
TL;DR: In this paper, single-atom-level structural investigations reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure, leading to solid-solution-type 2D MoS 2-xOx crystals.
Journal ArticleDOI
The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy
Péter Vancsó,Gábor Zsolt Magda,János Pető,Ji-Young Noh,Yong-Sung Kim,Chanyong Hwang,László P. Biró,Levente Tapasztó +7 more
TL;DR: Under special imaging conditions, STM measurements can fully resolve the native atomic scale defect structure of MoS2 single layers and experimentally identify the nature of the defect induced electronic mid-gap states, by combining topographic STM images with ab intio calculations.
Journal ArticleDOI
MoS2–carbon nanotube hybrid material growth and gas sensing
Geetanjali Deokar,Geetanjali Deokar,Péter Vancsó,Raul Arenal,Florent Ravaux,Juan Casanova-Chafer,Eduard Llobet,Anna A. Makarova,Denis V. Vyalikh,Denis V. Vyalikh,Denis V. Vyalikh,Clauida Struzzi,Philippe Lambin,Mustapha Jouiad,Jean-François Colomer +14 more
TL;DR: In this paper, a uniform coverage of MoS2 HNPs with a thickness around 20 nm is achieved by chemical vapor deposition technique, and the results confirm that the CNT template plays an important role in the growth of the HNP.
Journal ArticleDOI
Spontaneous doping of the basal plane of MoS2 single-layers through oxygen substitution under ambient conditions
János Pető,Tamás Ollár,Péter Vancsó,Péter Vancsó,Zakhar I. Popov,Gábor Zsolt Magda,Gergely Dobrik,Chanyong Hwang,Pavel B. Sorokin,Levente Tapasztó +9 more
TL;DR: Single-atom-level structural investigations reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure, giving rise to solid-solution-type 2DMoS2−xOx crystals.