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Ph. Leclère

Researcher at University of Mons

Publications -  23
Citations -  947

Ph. Leclère is an academic researcher from University of Mons. The author has contributed to research in topics: Thin film & Copolymer. The author has an hindex of 13, co-authored 23 publications receiving 918 citations. Previous affiliations of Ph. Leclère include University of Mons-Hainaut & Eindhoven University of Technology.

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Supramolecular organization of alpha,alpha'-disubstituted sexithiophenes.

TL;DR: Analysis of the UV/vis, fluorescence, circular dichroism, and circular polarization of luminescence spectroscopic data shows that these compounds form chiral aggregates in polar solvents and in the solid state, and AFM studies show that 1 self-organizes into chiral fiberlike structures in theSolid state.
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Relationship between the microscopic morphology and the charge transport properties in poly(3-hexylthiophene) field-effect transistors

TL;DR: In this article, the authors fabricate field effect transistors (FETs) by depositing a regioregular poly(3-hexylthiophene) active layer via different preparation methods.
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Crystal network formation in organic solar cells

TL;DR: In this paper, the effects of annealing on performance and morphology of photovoltaic devices using blends of two organic semiconductors: a conjugated polymer and a soluble perylene derivative.
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Supramolecular assembly of conjugated polymers: From molecular engineering to solid-state properties

TL;DR: In this article, a joint experimental-theoretical approach, combining scanning probe microscopy characterization of thin deposits and force-field molecular modeling of supramolecular aggregates and adsorbates is presented.
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Growth of ultrathin Ti films deposited on SnO2 by magnetron sputtering

TL;DR: In this paper, the authors studied the growth of successive amounts of titanium (additions of 0.5 nm) deposited by DC magnetron sputtering on SnO2 substrate, and they found that the growth mode changes from a Volmer Weber mode for low deposition rate (0.02 nm/s) to a pseudo Frank van der Merwe mode when the deposition rate is enhanced ( 0.05 nm/S).