P
Philip Kim
Researcher at Harvard University
Publications - 429
Citations - 120491
Philip Kim is an academic researcher from Harvard University. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 119, co-authored 416 publications receiving 108138 citations. Previous affiliations of Philip Kim include Korea Institute for Advanced Study & Center for Functional Nanomaterials.
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Interference of Cooper quartet Andreev bound states in a multi-terminal graphene-based Josephson junction
Ko-Fan Huang,Yuval Ronen,Régis Mélin,Denis Feinberg,Kenji Watanabe,Takashi Taniguchi,Philip Kim +6 more
TL;DR: In this paper, the authors used gate tunable four-terminal Josephson junction (JJ) coupled with a flux loop to construct the Cooper quartet (CQ) with a tunable spectrum.
Proceedings ArticleDOI
Growth of Nanotubes and Chemical Sensor Applications
James Hone,Philip Kim,X.M.H. Huang,Bhupesh Chandra,Robert Caldwell,Joshua P. Small,Byung Hee Hong,Takao Someya,Limin Huang,Stephen O'Brien,Colin Nuckolls +10 more
TL;DR: In this article, the authors used a number of methods to grow long aligned single-walled carbon nanotubes for applications such as multiprobe resistance measurement and high-current field effect transistors.
Journal ArticleDOI
Analysis of Scanned Probe Images for Magnetic Focusing in Graphene
TL;DR: In this paper, the authors used a cooled scanning probe microscope (SPM) to investigate the motion of electrons in nanoscale devices, including ballistic hBN-graphene-hBN devices.
Posted Content
Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire
TL;DR: In this article, conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration were simultaneously measured.
Journal ArticleDOI
Impact of geometry and non-idealities on electron 'optics' based graphene p-n junction devices.
TL;DR: In this paper, the authors quantify the importance of reducing edge roughness and overall geometry on the low bias transfer characteristics of GKT transistors and benchmark against experimental data, and find that geometry plays a critical role in determining the performance of electron optics based devices that utilize angular resolution of electrons.