P
Philip Kim
Researcher at Harvard University
Publications - 429
Citations - 120491
Philip Kim is an academic researcher from Harvard University. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 119, co-authored 416 publications receiving 108138 citations. Previous affiliations of Philip Kim include Korea Institute for Advanced Study & Center for Functional Nanomaterials.
Papers
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Journal ArticleDOI
Tuning the graphene work function by electric field effect.
TL;DR: In this paper, a variation of the work function for single and bilayer graphene devices measured by scanning Kelvin probe microscopy (SKPM) is reported, by using the electric field effect, which can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point.
Journal ArticleDOI
Dirac charge dynamics in graphene by infrared spectroscopy
Zhiqiang Li,Erik Henriksen,Zhigang Jiang,Zhao Hao,Michael C. Martin,Philip Kim,Horst Stormer,Horst Stormer,Dmitri Basov +8 more
TL;DR: In this article, an infrared spectromicroscopy study of charge dynamics in graphene integrated in gated devices is presented, which reveals significant departures of the quasiparticle dynamics from predictions made for Dirac fermions in idealized, free-standing graphene.
Journal ArticleDOI
Tuning the graphene work function by electric field effect
TL;DR: Variation of the work function for single and bilayer graphene devices measured by scanning Kelvin probe microscopy (SKPM) is reported, by use of the electric field effect.
Journal ArticleDOI
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
Xu Cui,Gwan Hyoung Lee,Young Duck Kim,Ghidewon Arefe,Pinshane Y. Huang,Chul Ho Lee,Daniel Chenet,Xiangwei Zhang,Lei Wang,Fan Ye,Filippo Pizzocchero,Bjarke Sørensen Jessen,Kenji Watanabe,Takashi Taniguchi,David A. Muller,Tony Low,Philip Kim,James Hone +17 more
TL;DR: Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2.
Journal ArticleDOI
Temperature-dependent transport in suspended graphene.
TL;DR: The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5