Neutral-point-clamped (NPC) inverters are the most widely used topology of multilevel inverters in high-power applications (several megawatts). This paper presents in a very simple way the basic operation and the most used modulation and control techniques developed to date. Special attention is paid to the loss distribution in semiconductors, and an active NPC inverter is presented to overcome this problem. This paper discusses the main fields of application and presents some technological problems such as capacitor balance and losses.

A Survey on Neutral-Point-Clamped Inverters

Modular multilevel converters have several attractive features such as a modular structure, the capability of transformer-less operation, easy scalability in terms of voltage and current, low expense for redundancy and fault tolerant operation, high availability, utilization of standard components, and excellent quality of the output waveforms. These features have increased the interest of industry and research in this topology, resulting in the development of new circuit configurations, converter models, control schemes, and modulation strategies. This paper presents a review of the latest achievements of modular multilevel converters regarding the mentioned research topics, new applications, and future trends.

Circuit topologies, modeling, control schemes, and applications of modular multilevel converters

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

https://ieeexplore.ieee.org/ielaam/41/8031005/7815312-aam.pdf

Review of Silicon Carbide Power Devices and Their Applications

The fifth edition of "Numerical Methods for Engineers" continues its tradition of excellence. Instructors love this text because it is a comprehensive text that is easy to teach from. Students love it because it is written for them--with great pedagogy and clear explanations and examples throughout. The text features a broad array of applications, including all engineering disciplines. The revision retains the successful pedagogy of the prior editions. Chapra and Canale's unique approach opens each part of the text with sections called Motivation, Mathematical Background, and Orientation, preparing the student for what is to come in a motivating and engaging manner. Each part closes with an Epilogue containing sections called Trade-Offs, Important Relationships and Formulas, and Advanced Methods and Additional References. Much more than a summary, the Epilogue deepens understanding of what has been learned and provides a peek into more advanced methods. Approximately 80% of the end-of-chapter problems are revised or new to this edition. The expanded breadth of engineering disciplines covered is especially evident in the problems, which now cover such areas as biotechnology and biomedical engineering. Users will find use of software packages, specifically MATLAB and Excel with VBA. This includes material on developing MATLAB m-files and VBA macros.

Numerical methods for engineers

This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 °C to 90 °C) and wide temperature swings (60 °C to 100 °C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

Silicon (Si) insulated-gate bipolar transistors are widely used in railway traction converters. In the near future, silicon carbide (SiC) technology will push the limits of switching devices in three directions: higher blocking voltage, higher operating temperature, and higher switching speeds. The first silicon carbide (SiC) MOSFET modules are available on the market and look promising. Although they are still limited in breakdown voltage, these wide-bandgap components should improve traction-chain efficiency. Particularly, a significant reduction in the switching losses is expected which should lead to improvements in power–weight ratios. Nevertheless, because of the high switching speed and the high current levels required by traction applications, the implementation of these new modules is critical. An original method is proposed to compare, in terms of stray inductance, several dc bus-bar designs. To evaluate the potential of these new devices, a first set of measurements, based on a single-pulse test-bench, was obtained. The switching behavior of SiC devices was well understood at turn-off and turn-on. To complete this work, the authors use an opposition method to compare Si-IGBT and SiC-MOSFET modules in voltage source inverter operation. For this purpose, a second test-bench, allowing electrical and thermal measurements, was developed. Experimental results confirm the theoretical loss-calculation of the single-pulse tests and the correct operation of up to three modules directly connected in parallel. This analysis provides guidelines for a full SiC inverter design, and prospects for developments in traction applications are presented.

Characterization and Implementation of Dual-SiC MOSFET Modules for Future Use in Traction Converters

The test and the characterization of medium or high-power electronic converters, under nominal operating conditions, are made difficult by the requirement of high-power electrical source and load. In addition, the energy lost during the test may be very significant. The opposition method, which consists of an association of two identical converters supplied by the same source, one operating as a generator, the other as a receptor, can be a better way to do these test. Another advantage is the possibility to realize accurate measurements of the different losses in the converters under test. In the first part of this paper, the characteristics of the method concerning loss measurements are compared to those of the electrical or calorimetric methods, then it is shown how it can be applied to different types of power electronic converters, choppers, switched mode power supplies, and pulsewidth modulation inverters. In the second part, different examples of studies conducted by the authors, and using this method, are presented. They have varying goals, from the test of soft-switching inverters to the characterization of integrated gate-commutated thyristor (IGCT) devices mounted into 2-MW choppers.

Use of opposition method in the test of high-power electronic converters

Today, dc arc furnaces are supplied by thyristor rectifiers. Because of the phase control strategy on the rectifiers, the arc voltage swings induce large reactive power variations on the power network and a static VAr compensator (SVC) or a static synchronous compensator (STATCOM) is always added to avoid flicker effect. In this paper, the authors present a new control strategy which suppresses the flicker effect and increases the furnace productivity. To supply the dc arc furnace, the ac/dc converter is based on diode rectifiers and choppers with a constant power control strategy. Consequently, the ac/dc converter can operate without a STATCOM or an SVC. To evaluate the gain in flicker and furnace productivity, simulations are done with Matlab software. These simulations take into account arc voltage measurements on a 100-MW dc arc furnace and allow for comparison of the different solutions.

A comparative study of AC/DC converters for high-power DC arc furnace

In today’s voltage source converter HVDC solutions, insulated-gate bipolar transistors (IGBTs) are used exclusively, generally in module form where the modular multilevel converter is concerned; this entails a number of protective measures that increase complexity and cost. As we move to higher transmitted powers, the use of integrated gate-commutated thyristors (IGCTs) would allow both higher voltages and currents while simultaneously reducing losses, failure rates, and costs, as this paper tries to demonstrate by comparing current production IGCTs with both current module and press-pack IGBTs.

On the Potential of IGCTs in HVDC

This paper highlights the potential of medium-voltage dc electrification for railway traction. A method is proposed for determining the dc voltage level in order to guarantee, in terms of traffic, equivalent performances to an ac-electrified railway line. Railroad traffic, type of transport service, and railway network topology being given, the analysis method takes into account the following constraints: voltage at the pantograph, heating of overhead line and rail-to-ground voltage. Once the dc voltage level is chosen, the dc electrification system is compared with a standard 25-kV ac electrification in the case of the French high-speed line from Paris to Strasbourg.

Philippe Ladoux

Papers

Characterization and Implementation of Dual-SiC MOSFET Modules for Future Use in Traction Converters

Use of opposition method in the test of high-power electronic converters

A comparative study of AC/DC converters for high-power DC arc furnace

On the Potential of IGCTs in HVDC

New Medium-Voltage DC Railway Electrification System