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Open AccessJournal ArticleDOI

Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics.

TLDR
In this paper, ultrathin epitaxial graphite films were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques.
Abstract
We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly ordered sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...

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Journal ArticleDOI

The rise of graphene

TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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The electronic properties of graphene

TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
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Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
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Single-layer MoS2 transistors

TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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Graphene-based composite materials

TL;DR: The bottom-up chemical approach of tuning the graphene sheet properties provides a path to a broad new class of graphene-based materials and their use in a variety of applications.
References
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Journal ArticleDOI

Room-temperature transistor based on a single carbon nanotube

TL;DR: In this paper, the fabrication of a three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics and has attracted much interest, particularly because it could lead to new miniaturization strategies in the electronics and computer industry.
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Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions

TL;DR: In this paper, it was shown that the conductance of disordered electronic systems depends on their length scale in a universal manner, and asymptotic forms for the scaling function were obtained for both two-dimensional and three-dimensional systems.
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Edge state in graphene ribbons: Nanometer size effect and edge shape dependence.

TL;DR: It is found that a non-negligible edge state survives even in graphene ribbons with less developed zigzag edges, when the system size is on a nanometer scale.
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Ballistic carbon nanotube field-effect transistors

TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.
Journal ArticleDOI

Single- and multi-wall carbon nanotube field-effect transistors

TL;DR: In this article, the authors fabricated field effect transistors based on individual single and multi-wall carbon nanotubes and analyzed their performance, showing that structural deformations can make them operate as field-effect transistors.
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