Pierre Lefranc

TL;DR: In this paper, a specific architecture for a low-side/high-side gate driver implementation for power devices running at high switching frequencies and under very high switching speeds is presented.

TL;DR: In this article, a general review on the properties of these materials comparing some performance between Si and SiC devices for typical power electronics applications is provided, based on studied information, line of progress and current state of developing, SiC seems to be the most viable substitute in high power and high temperature applications in the mid-term of Si, due to the fact that the GaN is still used in a reduced number of applications.

TL;DR: The optimization algorithm maximizes the converter efficiency while minimizing the transformer size, and a virtual prototyping tool is developed based on a genetic algorithm with numerical simulations, and in turn, is used to optimize the converter.

TL;DR: The propagation paths of parasitic currents through the gate driver circuitries, exited under high switching speeds, are studied in different configurations trying to minimize common mode currents generated.

TL;DR: The main constraints and issues of the SiC-MOSFET switching process are presented, and some recent proposed Gate Drivers to solve these constraints are presented throughout this work.