Patent
Method of depositing dielectric films
Srinivas D. Nemani,Li-Qun Xia,Dian Sugiarto,Ellie Yieh,Ping Xu,Francimar Campana-Schmitt,Jia Lee +6 more
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TLDR
In this paper, a method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field.Abstract:
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.read more
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Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
TL;DR: In this paper, the authors proposed a method for improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer, which can be used in a variety of layers such as barrier layers, etch stops, ARCs, passivation layers, and dielectric layers.
Patent
Semiconductor processing system and methods using capacitively coupled plasma
Jang-Gyoo Yang,Matthew L. Miller,Xinglong Chen,Kien N. Chuc,Qiwei Liang,Shankar Venkataraman,Dmitry Lubomirsky +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
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Semiconductor processing systems having multiple plasma configurations
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
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Removable amorphous carbon CMP stop
TL;DR: In this paper, a method for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal change of the low k Dielectric Material was provided.
Patent
Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition
Frederic Gaillard,Li-Qun Xia,Tian-Hoe Lim,Ellie Yieh,Wai-Fan Yau,Shin-Puu Jeng,Kuo-Wei Liu,Yung-Cheng Lu +7 more
TL;DR: In this article, a method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition was proposed, which has a carbon content of at least 1% by atomic weight.
References
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Patent
Hydrogenated oxidized silicon carbon material
TL;DR: In this paper, a low dielectric constant, thermally stable hydrogenated oxidized silicon carbon (HOSOC) film which can be used as an interconnect dielectrics in IC chips is disclosed.
Patent
Method of depositing a low k dielectric with organo silane
TL;DR: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas is described in this paper. But it is not suitable for use as a cap layer.
Patent
CVD plasma assisted low dielectric constant films
TL;DR: In this paper, a method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organoxane compound and an oxidizing gas at a low RF power level from 10-250 W was presented.
Patent
High temperature chemical vapor deposition chamber
Salvador P. Umotoy,Steve H. Chiao,Anh N. Nguyen,Be Van Vo,Joel M. Huston,James Jin-Long Chen,Lawrence Chung-Lai Lei +6 more
TL;DR: In this paper, an apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins, is described.
Patent
Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
TL;DR: In this paper, a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant was proposed. But this method was not suitable for the semiconductor industry.