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Priyanka Dwivedi

Researcher at Indian Institutes of Technology

Publications -  24
Citations -  288

Priyanka Dwivedi is an academic researcher from Indian Institutes of Technology. The author has contributed to research in topics: Porous silicon & Field-effect transistor. The author has an hindex of 6, co-authored 24 publications receiving 191 citations. Previous affiliations of Priyanka Dwivedi include Indian Institute of Technology Delhi & University of Central Florida.

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Wafer-Scale Synthesized MoS2/Porous Silicon Nanostructures for Efficient and Selective Ethanol Sensing at Room Temperature

TL;DR: This paper presents the performance of a highly selective ethanol sensor based on MoS2-functionalized porous silicon (PSi), and an enhancement in sensitivity and a selective response for ethanol were observed, with a minimum detection limit of 1 ppm.
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Scalable fabrication of prototype sensor for selective and sub-ppm level ethanol sensing based on TiO2 nanotubes decorated porous silicon

TL;DR: In this paper, a miniaturized prototype sensor based on TiO2 nanotubes/porous silicon (PS) heterojunction is developed for selective ethanol sensing in sub-ppm range.
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Synthesis of α-MoO3 nano-flakes by dry oxidation of RF sputtered Mo thin films and their application in gas sensing

TL;DR: In this article, the synthesis of orthorhombic (α) MoO3 nano-flakes by dry oxidation of RF sputtered Mo thin film is presented, where the influence of Mo thickness variation, oxidation temperature and time on the crystallographic structure, surface morphology and roughness of MoO 3 thin films was studied using SEM, AFM, XRD and Raman spectroscopy.
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Effect of TiO2 Functionalization on Nano-Porous Silicon for Selective Alcohol Sensing at Room Temperature

TL;DR: In this paper, a room temperature operated sensor for detection of alcohol vapours in low ppm range based on TiO 2 functionalized nano-porous silicon (PSi) is demonstrated.
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High performance broadband photodetector based on MoS2/porous silicon heterojunction

TL;DR: In this paper, a high speed efficient broadband photodetector based on a vertical n-MoS2/p-porous silicon heterostructure has been demonstrated, with a maximum responsivity of 9'A/W (550-850'nm) with a very high detectivity of ∼1014 Jones.