Q
Qing Cao
Researcher at IBM
Publications - 118
Citations - 6902
Qing Cao is an academic researcher from IBM. The author has contributed to research in topics: Carbon nanotube & Transistor. The author has an hindex of 31, co-authored 116 publications receiving 6367 citations. Previous affiliations of Qing Cao include Urbana University & University of Illinois at Urbana–Champaign.
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Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
TL;DR: In this paper, a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, is used to provide a semiconductor channel exhibiting improved electronic properties relative to conventional nanotube-based electronic systems.
Journal ArticleDOI
Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects
Qing Cao,John A. Rogers +1 more
TL;DR: In this paper, the authors present a review of recent advances in assembly techniques for forming ultrathin carbon nanotubes, modeling and experimental work that reveals their collective properties, and engineering aspects of implementation in sensors and in electronic devices and circuits with various levels of complexity.
Journal ArticleDOI
Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
TL;DR: It is shown that aligned arrays of semiconducting carbon nanotubes can be assembled using the Langmuir-Schaefer method, and the intrinsic mobility of the nanotube is preserved after array assembly.
Journal ArticleDOI
Highly bendable, transparent thin-film transistors that use carbon-nanotube-based conductors and semiconductors with elastomeric dielectrics
Qing Cao,Seung Hyun Hur,Zhengtao Zhu,Yugang Sun,Congjun Wang,Matthew Meitl,Moonsub Shim,John A. Rogers +7 more
TL;DR: In this article, the authors report the use of networks of single-walled carbon nanotubes (SWNTs) with high and moderate coverages for all of the conducting (i.e., source, drain, and gate electrodes) and semiconducting layers, respectively, of a type of transparent, mechanically flexible, thin-film transistor (TFT).