This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

Handbook of physical vapor deposition (PVD) processing

Silicides and ohmic contacts

The formation of TiSi2 thin films on silicon substrates has been investigated with several transmission electron microscope techniques. For films formed either by reacting titanium with a silicon substrate or by sintering a codeposited (Ti+Si) mixture, electron diffraction patterns show that a metastable phase—TiSi2 (C49 or ZrSi2 structure)—forms prior to the equilibrium phase—TiSi2 (C54 structure). High‐resolution images indicate that the metastable TiSi2‐silicon interface is atomically sharp, with no ‘‘glassy membrane’’ layer present. The annealing temperature required to transform the metastable TiSi2 to the low resistivity, equilibrium TiSi2 increases as the thin‐film impurity content increases. Previous studies of TiSi2 formation are discussed in light of these results.

Metastable phase formation in titanium‐silicon thin films

Titanium nitride (TiN) is one of the most well-established engineering materials nowadays. TiN can overcome most of the drawbacks of palsmonic metals due to its high electron conductivity and mobility, high melting point and due to the compatibility of its growth with Complementary Metal Oxide Semiconductor (CMOS) technology. In this work, we review the dielectric function spectra of TiN and we evaluate the plasmonic performance of TiN by calculating (i) the Surface Plasmon Polariton (SPP) dispersion relations and (ii) the Localized Surface Plasmon Resonance (LSPR) band of TiN nanoparticles, and we demonstrate a significant plasmonic performance of TiN.

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Optical Properties and Plasmonic Performance of Titanium Nitride

Synthesis of crystalline metal nitride and metal carbide nanostructures by sol-gel chemistry

A comparative study of the diffusion barrier properties of TiN and ZrN

Arsenic distribution in bilayers of TiSi2 on polycrystalline silicon during heat treatment

Thermal degradation of TiSi2/poly-Si gate electrodes

The etch rate of doped polycrystalline silicon films (polysilicon) was studied as a function of dopant concentration, degree of dopant activation, and dopant type, in a parallel‐plate reactor, using a CFCl3 plasma. The significant difference in etch rate between n‐doped and p‐ or undoped polysilicon observed indicates that the electrical activity of the bulk (and surface) plays an important role when etching at a plasma frequency of 13.56 MHz. However, at lower frequencies this difference in etch rate for n‐ and p‐doped polysilicon is less pronounced.

Dry etching of n‐ and p‐type polysilicon: Parameters affecting the etch rate

A comparison of different methods for removal of damage caused by reactive sputter etching of silicon

R. Buchta

Papers

A comparative study of the diffusion barrier properties of TiN and ZrN

Arsenic distribution in bilayers of TiSi2 on polycrystalline silicon during heat treatment

Thermal degradation of TiSi2/poly-Si gate electrodes

Dry etching of n‐ and p‐type polysilicon: Parameters affecting the etch rate

A comparison of different methods for removal of damage caused by reactive sputter etching of silicon