This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

Handbook of physical vapor deposition (PVD) processing

Silicides and ohmic contacts

Metal silicides have played an indispensable role in the rapid developments of microelectronics since PtSi was first used to improve the rectifying characteristics of diodes in early 1960s. This wo ...

Metal silicides in CMOS technology : Past, present, and future trends

Titanium nitride (TiN) is one of the most well-established engineering materials nowadays. TiN can overcome most of the drawbacks of palsmonic metals due to its high electron conductivity and mobility, high melting point and due to the compatibility of its growth with Complementary Metal Oxide Semiconductor (CMOS) technology. In this work, we review the dielectric function spectra of TiN and we evaluate the plasmonic performance of TiN by calculating (i) the Surface Plasmon Polariton (SPP) dispersion relations and (ii) the Localized Surface Plasmon Resonance (LSPR) band of TiN nanoparticles, and we demonstrate a significant plasmonic performance of TiN.

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Optical Properties and Plasmonic Performance of Titanium Nitride

The properties of 100‐nm‐thick Ti55N45 and Ti45N55 films as diffusion barriers between silicon substrates and thin Cu films were studied by sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, secondary‐ion mass spectrometry, transmission electron microscopy, scanning electron microscopy, energy dispersive x‐ray spectroscopy, x‐ray diffractometry, and diode leakage current measurements. For unpatterned Si/titanium nitride/Cu samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques up to 700 °C for Ti55N45 and 900 °C for Ti45N55 after 30 s rapid thermal anneal in N2, respectively. Leakage current measurements did not show deterioration of diode junction (with junction depth of 0.25 and 0.30 μm) up to 650 °C for Ti55N45 and 800 °C for Ti45N55. The improvement in failure temperature of the N‐rich Ti45N55 diffusion barrier is a result of the lower defect density and a more stable feature furnished by nitrogen stuffed at the defects.

Reactively sputtered TiN as a diffusion barrier between Cu and Si

A comparative study of the diffusion barrier properties of TiN and ZrN

The phase formation during rapid thermal annealing of a Ti/Mo bilayer sequentially deposited on Si substrates has been studied. The Mo layer varied from 0.5 to 2 nm and the Ti layer was always 60 nm thick. The presence of the Mo interposing layer enhances the formation of the C54 of TiSi2 by first forming a Mo‐bearing silicide phase of hexagonal structure. The desired C54 phase then nucleates and grows on top of this Mo‐bearing silicide phase at a temperature as low as 650 °C via Si diffusion through the growing silicide layers. This is about 100 °C lower than what is usually needed for the C49–C54 transformation. The significance of this finding is that the usual route for the formation of TiSi2, i.e., the C49 phase forms as a result of the Ti–Si interaction and the C54 phase forms as the product of phase transformation, is altered by the interposition of a thin refractory metal (here Mo) layer between Ti and Si.

Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum

Limitation of Ti/TiN diffusion barrier layers in silicon technology

An evaluation of the processing of zirconium nitride and the usefulness of this nitride as a diffusion barrier between aluminum and silicon has been carried out. Reactive sputtering from an elemental zirconium target in a mixture of Ar/N2 makes it possible to change the nitrogen content in the deposited film. The composition variation with N2 concentration will be presented. Films have been prepared using rf‐diode reactive sputtering. The as‐deposited film resistivity dependence on bias voltage has also been studied. Zirconium deposited on silicon forms a silicide at 550–600 °C. We have found by Rutherford backscattering spectroscopy analysis that during this silicide formation on arsenic implanted silicon substrates, the arsenic is piled up at the silicon/silicide interface. This effect favors the formation of a low resistance Ohmic contact. Since the barrier height between the silicide and silicon is expected to be 0.55 eV we want to point out that this contact may be useful for both n‐ and p‐type regio...

S. Nygren

Papers

A comparative study of the diffusion barrier properties of TiN and ZrN

Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum

Limitation of Ti/TiN diffusion barrier layers in silicon technology

Reactively sputtered ZrN used as an Al/Si diffusion barrier in a Zr contact to silicon

Morphological Instabilities in Bilayers Incorporating Polycristalline Silicon