Terahertz spectroscopy systems use far-infrared radiation to extract molecular spectral information in an otherwise inaccessible portion of the electromagnetic spectrum. Materials research is an essential component of modern terahertz systems: novel, higher-power terahertz sources rely heavily on new materials such as quantum cascade structures. At the same time, terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules.

Materials for terahertz science and technology

The Earth Observing System Microwave Limb Sounder measures several atmospheric chemical species (OH, HO/sub 2/, H/sub 2/O, O/sub 3/, HCl, ClO, HOCl, BrO, HNO/sub 3/, N/sub 2/O, CO, HCN, CH/sub 3/CN, volcanic SO/sub 2/), cloud ice, temperature, and geopotential height to improve our understanding of stratospheric ozone chemistry, the interaction of composition and climate, and pollution in the upper troposphere. All measurements are made simultaneously and continuously, during both day and night. The instrument uses heterodyne radiometers that observe thermal emission from the atmospheric limb in broad spectral regions centered near 118, 190, 240, and 640 GHz, and 2.5 THz. It was launched July 15, 2004 on the National Aeronautics and Space Administration's Aura satellite and started full-up science operations on August 13, 2004. An atmospheric limb scan and radiometric calibration for all bands are performed routinely every 25 s. Vertical profiles are retrieved every 165 km along the suborbital track, covering 82/spl deg/S to 82/spl deg/N latitudes on each orbit. Instrument performance to date has been excellent; data have been made publicly available; and initial science results have been obtained.

https://aura.gsfc.nasa.gov/science/publications/Waters_Froidevaux_Harwood_IEEE2006.pdf

The Earth observing system microwave limb sounder (EOS MLS) on the aura Satellite

Terahertz irradiation and sensing is being applied for the first time to a wide range of fields outside the traditional niches of space science, molecular line spectroscopy, and plasma diagnostics. This paper surveys some of the terahertz measurements and applications of interest in the biological and medical sciences.

Terahertz technology in biology and medicine

The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices...

Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

The idea of wireless power transfer (WPT) has been around since the inception of electricity. In the late 19th century, Nikola Tesla described the freedom to transfer energy between two points without the need for a physical connection to a power source as an ?all-surpassing importance to man? [1]. A truly wireless device, capable of being remotely powered, not only allows the obvious freedom of movement but also enables devices to be more compact by removing the necessity of a large battery. Applications could leverage this reduction in size and weight to increase the feasibility of concepts such as paper-thin, flexible displays [2], contact-lens-based augmented reality [3], and smart dust [4], among traditional point-to-point power transfer applications. While several methods of wireless power have been introduced since Tesla?s work, including near-field magnetic resonance and inductive coupling, laser-based optical power transmission, and far-field RF/microwave energy transmission, only RF/microwave and laser-based systems are truly long-range methods. While optical power transmission certainly has merit, its mechanisms are outside of the scope of this article and will not be discussed.

Harvesting Wireless Power: Survey of Energy-Harvester Conversion Efficiency in Far-Field, Wireless Power Transfer Systems

A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5-THz Schottky diode mixer. The mixer blends conventional machined metallic waveguide with micromachined monolithic GaAs circuitry to form, for the first time, a robust, easily fabricated, and assembled room-temperature planar diode receiver at frequencies above 2 THz. Measurements of receiver performance, in air, yield at T/sub receiver/ of 16500-K double sideband (DSB) at 8.4-GHz intermediate frequency (IF) using a 150-K commercial Miteq amplifier. The receiver conversion loss (diplexer through IF amplifier input) measures 16.9 dB in air, yielding a derived "front-end" noise temperature below 9000-K DSB at 2514 GHz. Using a CO/sub 2/-pumped methanol far-infrared laser as a local oscillator at 2522 GHz, injected via a Martin-Puplett diplexer, the required power is /spl ap/5 mW for optimum pumping and can be reduced to less than 3 mW with a 15% increase in receiver noise. Although demonstrated as a simple submillimeter-wave mixer, the all-GaAs membrane structure that has been developed is suited to a wide variety of low-loss high-frequency radio-frequency circuits.

/pdf/2-5-thz-gaas-monolithic-membrane-diode-mixer-39yudyz7ub.pdf

2.5-THz GaAs monolithic membrane-diode mixer

This paper describes a dual-polarized rectenna capable of producing a 50-V output voltage that can be used for driving mechanical actuators. This study demonstrates a circuit topology that allows the output of multiple rectenna elements to be combined in order to step up the output voltage. In this paper, an independent rectifying circuit is used for each of two orthogonal polarizations. By proper combination, the output voltage is doubled over that of the single polarization case. Such panels are being explored for use on the next-generation space telescope to eliminate wiring between actuators and provide for true mechanical isolation.

A compact dual-polarized 8.51-GHz rectenna for high-voltage (50 V) actuator applications

We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBT's). Devices with 0.4-/spl mu/m emitter and 0.4-/spl mu/m collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cutoff frequency f/sub max/ is 820 GHz. The high f/sub max/, results from the scaling of HBT's junction widths, from elimination of collector series resistance through the use of a Schottky collector contact, and from partial screening of the collector-base capacitance by the collector space charge.

Submicron transferred-substrate heterojunction bipolar transistors

The OH radical is an important player in known ozone depletion cycles; however, due to its location in the atmosphere, it must be studied from either a balloon or spaceborne platform. For long-term mapping over large portions of the earth, a spaceborne platform is the most desirable. NASA's Earth Observing System Microwave Limb Sounder instrument is slated to house a 2.5-THz Schottky-diode receiver for such measurements. In this paper, we describe the design, fabrication, and testing of the receiver front end. Measured double-sideband (DSB) receiver noise temperatures of better than 9000 K are reproducibly achieved with all devices of our best design. Estimated mixer noise is 3500-K DSB for optimal bias conditions and at room temperature. Selected components will be used in the first terahertz heterodyne receiver to be flown in space.

A 2.5-THz receiver front end for spaceborne applications

High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling Narrow collector junctions can be obtained by using substrate transfer processes, or -if contact resistivity is greatly reduced -by reducing the width of the base Ohmic contacts in a mesa structure HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs Logic gate delays are primarily set by depletion-layer charging times, and neither fτ nor fmax is indicative of logic speed For high speed logic, epitaxial layers must be thinned, emitter and collector junction widths reduced, current density increased, and emitter parasitic resistance decreased Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz If extrapolated at -20 dB/decade, the power gain cutoff frequency fmax is 11 THz Transferred-substrate HBTs have obtained 295 GHz fτ Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz, 66 GHz master-slave flip-flops, and 18 GHz clock rate Δ-Σ ADCs

R.P. Smith

Papers

2.5-THz GaAs monolithic membrane-diode mixer

A compact dual-polarized 8.51-GHz rectenna for high-voltage (50 V) actuator applications

Submicron transferred-substrate heterojunction bipolar transistors

A 2.5-THz receiver front end for spaceborne applications

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs