Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.

Spin-torque switching with the giant spin hall effect of tantalum

Terahertz spectroscopy systems use far-infrared radiation to extract molecular spectral information in an otherwise inaccessible portion of the electromagnetic spectrum. Materials research is an essential component of modern terahertz systems: novel, higher-power terahertz sources rely heavily on new materials such as quantum cascade structures. At the same time, terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules.

Materials for terahertz science and technology

Over the past three decades a new spectroscopic technique with unique possibilities has emerged. Based on coherent and time-resolved detection of the electric field of ultrashort radiation bursts in the far-infrared, this technique has become known as terahertz time-domain spectroscopy (THz-TDS). In this review article the authors describe the technique in its various implementations for static and time-resolved spectroscopy, and illustrate the performance of the technique with recent examples from solid-state physics and physical chemistry as well as aqueous chemistry. Examples from other fields of research, where THz spectroscopic techniques have proven to be useful research tools, and the potential for industrial applications of THz spectroscopic and imaging techniques are discussed.

Terahertz spectroscopy and imaging – Modern techniques and applications

Fast Fourier Transform

The Earth Observing System Microwave Limb Sounder measures several atmospheric chemical species (OH, HO/sub 2/, H/sub 2/O, O/sub 3/, HCl, ClO, HOCl, BrO, HNO/sub 3/, N/sub 2/O, CO, HCN, CH/sub 3/CN, volcanic SO/sub 2/), cloud ice, temperature, and geopotential height to improve our understanding of stratospheric ozone chemistry, the interaction of composition and climate, and pollution in the upper troposphere. All measurements are made simultaneously and continuously, during both day and night. The instrument uses heterodyne radiometers that observe thermal emission from the atmospheric limb in broad spectral regions centered near 118, 190, 240, and 640 GHz, and 2.5 THz. It was launched July 15, 2004 on the National Aeronautics and Space Administration's Aura satellite and started full-up science operations on August 13, 2004. An atmospheric limb scan and radiometric calibration for all bands are performed routinely every 25 s. Vertical profiles are retrieved every 165 km along the suborbital track, covering 82/spl deg/S to 82/spl deg/N latitudes on each orbit. Instrument performance to date has been excellent; data have been made publicly available; and initial science results have been obtained.

https://aura.gsfc.nasa.gov/science/publications/Waters_Froidevaux_Harwood_IEEE2006.pdf

The Earth observing system microwave limb sounder (EOS MLS) on the aura Satellite

Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta∣CoFeB∣MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta∣CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

Recently developed magnetic tunnel junctions with full perpendicular magnetization that are spin-torque switchable allow for quantitative comparison of spin-torque switching statistics with a macrospin model. For typical devices above 50 nm in lateral size, the comparison suggests the presence of subvolume magnetic excitations which often dominate the switching process and which degrade the spin-torque switching efficiency. A simple model of subvolume spin-torque-driven magnetic switching is presented to account for the experimental observations. The origin of the subvolume thermal excitation is traced to a competition between the macrospin fluctuation within a simple uniaxial anisotropy potential and that of thermal magnon excitation. The subvolume excitation problem highlights the importance of improving the magnetic exchange stiffness of the junction free layer, and the reduction of junction lateral sizes below 50 nm where an improved spin-torque efficiency is seen as the switching dynamics cross over to a more macrospin-like process.

Effect of subvolume excitation and spin-torque efficiency on magnetic switching

We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens

/pdf/design-and-characterization-of-two-junction-tuning-circuits-5750rsxsr8.pdf

Michael C. Gaidis

Papers

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

Effect of subvolume excitation and spin-torque efficiency on magnetic switching

Design and Characterization of Two-Junction Tuning Circuits for Submillimeter SIS Mixers

Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions