R
R. Thamankar
Researcher at Singapore University of Technology and Design
Publications - 38
Citations - 274
R. Thamankar is an academic researcher from Singapore University of Technology and Design. The author has contributed to research in topics: Scanning tunneling microscope & Magnetization. The author has an hindex of 10, co-authored 35 publications receiving 243 citations. Previous affiliations of R. Thamankar include Free University of Berlin & University of California, Riverside.
Papers
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Journal ArticleDOI
Spin-polarized transport in magnetically assembled carbon nanotube spin valves
R. Thamankar,Sandip Niyogi,B. Y. Yoo,Y. W. Rheem,Nosang V. Myung,Robert C. Haddon,Roland Kawakami +6 more
TL;DR: In this paper, a spin valve with electrochemically deposited ferromagnetic (FM) electrodes was developed to produce stable spin valves with highly transmissive FM/CNT contacts.
Journal ArticleDOI
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy
R. Thamankar,Nagarajan Raghavan,Joel Molina,Francesco Maria Puglisi,Sean J. O’Shea,K. Shubhakar,Luca Larcher,Paolo Pavan,Andrea Padovani,K. L. Pey +9 more
TL;DR: In this article, two-level and multi-level RTN signals due to single and multiple defect locations (possibly dispersed in space and energy) are observed on 4-nm HfO2 thin films deposited on n-Si (100) substrate.
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Magnetically assembled multiwalled carbon nanotubes on ferromagnetic contacts
Sandip Niyogi,Carlos M. Hangarter,R. Thamankar,Yueh-Feng Chiang,Roland Kawakami,Nosang V. Myung,Robert C. Haddon +6 more
TL;DR: In this paper, a facile method for assembling carbon nanotubes (CNTs) on ferromagnetic metal contacts is described, where multiwalled CNTs with a magnetic cap are fabricated by thermally evaporating nickel on top of a vertical array of MWNTs grown on silicon.
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Structural and magnetic properties of ultrathin fccFexMn1−xfilms on Cu(100)
TL;DR: In this article, the authors have studied ultrathin Fe x Mn 1 - x films on Cu(100) for Fe contents ranging from 45% to 80% and found a c(2 × 2) structure for thicknesses below 5 ML and above this coverage it transforms into a p(1 x 1) structure.
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Low Temperature Nanoscale Electronic Transport on the MoS_2 surface
TL;DR: Two-probe electronic transport measurements on a Molybdenum disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions as mentioned in this paper.