L
Luca Larcher
Researcher at Applied Materials
Publications - 287
Citations - 8198
Luca Larcher is an academic researcher from Applied Materials. The author has contributed to research in topics: Resistive random-access memory & Dielectric. The author has an hindex of 44, co-authored 273 publications receiving 6710 citations. Previous affiliations of Luca Larcher include University of Modena and Reggio Emilia & SEMATECH.
Papers
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Journal ArticleDOI
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors
Milan Pešić,Franz P. G. Fengler,Luca Larcher,Andrea Padovani,Tony Schenk,Everett D. Grimley,Xiahan Sang,James M. LeBeau,Stefan Slesazeck,Uwe Schroeder,Thomas Mikolajick +10 more
TL;DR: In this paper, the authors identify the root cause for the increase of the remnant polarization during the wake-up phase and subsequent polarization degradation with further cycling of a hafnium oxide-based ferroelectric random access memory (FeRAM).
Journal ArticleDOI
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
Journal ArticleDOI
Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker,David Gilmer,Dmitry Veksler,Paul Kirsch,Luca Vandelli,Andrea Padovani,Luca Larcher,Keith P. McKenna,Alexander L. Shluger,V. Iglesias,Marc Porti,Montserrat Nafria +11 more
TL;DR: In this paper, the authors combine electrical, physical, and transport/atomistic modeling results to identify critical conductive filament features controlling TiN/HfO2/TiN resistive memory (RRAM) operations.
Journal ArticleDOI
Modeling and Optimization of a Solar Energy Harvester System for Self-Powered Wireless Sensor Networks
TL;DR: A methodology for optimizing a solar harvester with maximum power point tracking for self-powered wireless sensor network (WSN) nodes and helps in boosting efficiency, allowing to reach a maximum efficiency of 85% with discrete components.
Journal ArticleDOI
Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
Chengbin Pan,Yanfeng Ji,Na Xiao,Fei Hui,Kechao Tang,Yuzheng Guo,Xiaoming Xie,Francesco Maria Puglisi,Luca Larcher,Enrique Miranda,Lanlan Jiang,Yuanyuan Shi,Ilia Valov,Paul C. McIntyre,Rainer Waser,Mario Lanza +15 more
Abstract: The use of 2D materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while the research in 2D metallic and semiconducting materials is well established, detailed knowledge and applications of 2D insulators are still scarce. In this paper, the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h-BN) is studied using different electrode materials, and a family of h-BN-based resistive random access memories with tunable capabilities is engineered. The devices show the coexistence of forming free bipolar and threshold-type RS with low operation voltages down to 0.4 V, high current on/off ratio up to 106, and long retention times above 10 h, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h-BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which are more abundant at the GBs. To the best of our knowledge, h-BN is the first 2D material showing the coexistence of bipolar and threshold RS, which may open the door to additional functionalities and applications.