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R

R. Wang

Researcher at University of Minnesota

Publications -  16
Citations -  1249

R. Wang is an academic researcher from University of Minnesota. The author has contributed to research in topics: Wurtzite crystal structure & Electronic band structure. The author has an hindex of 11, co-authored 16 publications receiving 1200 citations.

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Electron transport characteristics of GaN for high temperature device modeling

TL;DR: In this article, Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN.
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Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

TL;DR: In this article, the ensemble Monte Carlo technique is used to calculate the basic electronic transport properties for both zincblende and wurtzite crystal phases of bulk gallium nitride.
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Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

TL;DR: In this paper, the first calculations of hole initiated interband impact ionization in bulk zincblende and wurtzite phase GaN are presented using an ensemble Monte Carlo simulation including full details of all of the relevant valence bands, derived from an empirical pseudopotential approach, for each crystal type.
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Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

TL;DR: In this paper, the high-field electronic transport properties of bulk zinc-blende and wurtzite phase gallium nitride were analyzed using ensemble Monte Carlo simulations, focusing particularly on the electron initiated impact ionization rate.
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Hole transport properties of bulk zinc‐blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

TL;DR: In this paper, the hole transport properties of bulk zinc-blende and wurtzite phase GaN at field strengths at which impact ionization does not occur significantly are investigated.