scispace - formally typeset
R

Ralph Paetzold

Researcher at Osram Opto Semiconductors GmbH

Publications -  39
Citations -  865

Ralph Paetzold is an academic researcher from Osram Opto Semiconductors GmbH. The author has contributed to research in topics: Layer (electronics) & OLED. The author has an hindex of 12, co-authored 39 publications receiving 838 citations. Previous affiliations of Ralph Paetzold include University of Erlangen-Nuremberg & Siemens.

Papers
More filters
Journal ArticleDOI

Permeation rate measurements by electrical analysis of calcium corrosion

TL;DR: In this paper, a concept for measuring ultralow permeation rates was demonstrated for polyester foils with single-and double-sided barrier coatings, and the resulting base line contribution to the water vapor transmission rate of a glass reference was below 10−6 ǫg/m2
Journal ArticleDOI

Light extraction from OLEDs for lighting applications through light scattering

TL;DR: In this article, scattering films on the viewer's side of the substrate were used to increase the outcoupling efficiency of OLEDs for lighting applications, and experimental results showed that the increase of outcouple efficiency is dependent from the absolute number of scattering particles in the matrix.
Journal ArticleDOI

Performance of flexible polymeric light-emitting diodes under bending conditions

TL;DR: In this paper, an organic light-emitting diodes were fabricated on a 125μm-thick polyethylene terephthalate substrate covered with 100 nm indium tin oxide.
Journal ArticleDOI

Impact of Joule heating on the brightness homogeneity of organic light emitting devices

TL;DR: In this article, the authors investigated the impact of the luminance distribution on the brightness homogeneity of large area organic light emitting diodes and found that the increased device temperature is leading to higher local current densities resulting in a reduced brightness homogeneous.
Patent

Method for Producing an Electronic Component and Electronic Component

TL;DR: In this paper, a method for producing an electronic component that comprises barrier layers for encapsulating the component, comprising the following steps: making available a substrate (1) having at least one functional layer, applying at least first barrier layer (3) to the functional layer (22) by way of plasma-less atomic layer deposition (PLALD), and applying the second barrier layer(4) to functional layer(22), by using PECVD.