R
Ratnabali Banerjee
Researcher at Indian Association for the Cultivation of Science
Publications - 42
Citations - 849
Ratnabali Banerjee is an academic researcher from Indian Association for the Cultivation of Science. The author has contributed to research in topics: Thin film & Amorphous silicon. The author has an hindex of 10, co-authored 41 publications receiving 829 citations.
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Properties of tin doped indium oxide thin films prepared by magnetron sputtering
TL;DR: In this paper, the magnetron sputtering technique was used to produce highly transparent (transmission ∼90%) and conducting (resistivity ∼10−5 Ω'cm) indium tin oxide (ITO) films.
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Degradation of tin‐doped indium‐oxide film in hydrogen and argon plasma
TL;DR: In this article, the degradation of tin-doped indiumoxide (ITO) films in glow-discharge plasmas of hydrogen and argon have been investigated, and several parameters have been varied for the study, including the temperature of ITO under ion bombardment, the rf power density, the time of exposure to plasma, and the gas flow rate.
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Properties of electron-beam-evaporated tin oxide films
Debajyoti Das,Ratnabali Banerjee +1 more
TL;DR: In this paper, a transparent conducting thin films of tin oxide were prepared by electron beam evaporation of sintered pellets of SnO 2 under controlled conditions, and structural, electrical and optical properties were measured to characterize the films.
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Properties of tin oxide films prepared by reactive electron beam evaporation
Ratnabali Banerjee,Debajyoti Das +1 more
TL;DR: Tin oxide films were prepared by electron beam evaporation of pellets of Specpure SnO2 in the presence of added oxygen as mentioned in this paper, and by optimizing the deposition conditions, transparent and conducting tin oxide films exhibiting the structural characteristics of a predominant SnO 2 phase were produced.
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Characterization of tin doped indium oxide films prepared by electron beam evaporation
TL;DR: In this article, the authors used X-ray diffraction and transmission electron microscopy to characterize the resistivity, Hall effect, transmittance and optical band gap of ITO films.