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Journal ArticleDOI

Degradation of tin‐doped indium‐oxide film in hydrogen and argon plasma

Ratnabali Banerjee, +4 more
- 01 Aug 1987 - 
- Vol. 62, Iss: 3, pp 912-916
TLDR
In this article, the degradation of tin-doped indiumoxide (ITO) films in glow-discharge plasmas of hydrogen and argon have been investigated, and several parameters have been varied for the study, including the temperature of ITO under ion bombardment, the rf power density, the time of exposure to plasma, and the gas flow rate.
Abstract
The degradation of tin‐doped indium‐oxide (ITO) films in glow‐discharge plasmas of hydrogen and argon have been investigated. Parameters which have been varied for the study include the temperature of ITO under ion bombardment, the rf power density, the time of exposure to plasma, and the gas flow rate. After bombardment, scanning electron micrograph observation, measurement of sheet resistance, transmittance and reflectance, and Auger analysis have been carried out to decide the extent of degradation. Magnetron‐sputtered ITO films have been found to be more resistant to ion bombardment damage compared to electron‐beam evaporated films. The degradation of ITO under the plasma of the reducing species such as hydrogen has been found to take place at lower temperature and power density compared to argon plasma.

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Citations
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Sol-gel-derived c-axis oriented ZnO thin films

TL;DR: In this paper, the structure, optical and electrical properties of ZnO films were investigated, and the c-axis lattice constants of the thin films and the band gap were shown to be a little larger than those of the crystal. But the differences between the thin film and crystal might be attributable to the grain boundaries and imperfections in thin films.
References
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Journal ArticleDOI

Electrical and optical properties of undoped and antimony‐doped tin oxide films

TL;DR: In this paper, the electrical and optical properties of undoped and antimony-doped tin oxide films have been studied and the temperature dependence of electron mobility has been analyzed to establish the electron conduction mechanism.
Journal ArticleDOI

Properties of tin doped indium oxide thin films prepared by magnetron sputtering

TL;DR: In this paper, the magnetron sputtering technique was used to produce highly transparent (transmission ∼90%) and conducting (resistivity ∼10−5 Ω'cm) indium tin oxide (ITO) films.
Journal ArticleDOI

Transparent heat-reflecting coatings based on highly doped semiconductors☆

TL;DR: In this paper, the free electron densities of up to 1021 cm−3 and mobilities in the range 10−70 cm2 V−1s−1 can be obtained by means of an appropriate doping and/or oxygen deficit.
Journal ArticleDOI

Recent developments in amorphous silicon solar cells

TL;DR: In this article, the performance characteristics of present amorphous silicon cells are described, and the loss mechanisms that limit performance are considered, and an effort has been made to point out those areas where further research is needed.
Journal ArticleDOI

Characterization of tin doped indium oxide films prepared by electron beam evaporation

TL;DR: In this article, the authors used X-ray diffraction and transmission electron microscopy to characterize the resistivity, Hall effect, transmittance and optical band gap of ITO films.
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