R
Reji Thomas
Researcher at Lovely Professional University
Publications - 134
Citations - 4047
Reji Thomas is an academic researcher from Lovely Professional University. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 31, co-authored 125 publications receiving 3318 citations. Previous affiliations of Reji Thomas include Indian Institute of Technology Delhi & Forschungszentrum Jülich.
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Emerging memories: resistive switching mechanisms and current status.
Doo Seok Jeong,Reji Thomas,Ram S. Katiyar,James F. Scott,Hermann Kohlstedt,A. Petraru,Cheol Seong Hwang +6 more
TL;DR: The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.
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Solid polymer electrolytes based on polyethylene oxide and lithium trifluoro- methane sulfonate (PEO–LiCF3SO3): Ionic conductivity and dielectric relaxation
TL;DR: In this paper, a dielectric loss spectra showed the presence of one relaxation for all compositions, which is associated with the motions of the Li ion coordinated polymer segments, and the relaxation has been characterized by the empirical Havriliak-Negami (H-N) equation.
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A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction
Fabian Ambriz-Vargas,Gitanjali Kolhatkar,Maxime Broyer,Azza Hadj-Youssef,Rafik Nouar,Andranik Sarkissian,Reji Thomas,Carlos Gómez-Yáñez,Marc A. Gauthier,Andreas Ruediger +9 more
TL;DR: This study suggests that Hf0.5Zr 0.5O2 is a promising candidate for integration into conventional Si memory technology, due to its lack of compatibility with the complementary metal oxide semiconductor process (CMOS).
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Proof-of-Work Consensus Approach in Blockchain Technology for Cloud and Fog Computing Using Maximization-Factorization Statistics
TL;DR: An efficient statistical method with proof-of-work consensus approach for cloud and fog computing with advantage of less iteration to converge to the consensus solution and easiness to configure the complete mathematical model as per the requirement.
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Multiferroic thin-film integration onto semiconductor devices
TL;DR: This review deals with thin films of single-phase materials which exhibit two primary ferroic properties, namely ferroelectricity and (anti)ferromagnetism, deposited directly or through buffer layers onto semiconductors.