R
Renato Giacomini
Researcher at Centro Universitário da FEI
Publications - 67
Citations - 215
Renato Giacomini is an academic researcher from Centro Universitário da FEI. The author has contributed to research in topics: Transistor & Photodiode. The author has an hindex of 6, co-authored 64 publications receiving 187 citations. Previous affiliations of Renato Giacomini include Universidade São Judas Tadeu & University of São Paulo.
Papers
More filters
Journal ArticleDOI
Trapezoidal Cross-Sectional Influence on FinFET Threshold Voltage and Corner Effects
TL;DR: In this article, the authors analyzed the effect of the inclined surfaces of FinFETs on the threshold voltage and the comer effect, which depends on the inclination angle and doping level.
Journal ArticleDOI
Modeling Silicon on Insulator MOS Transistors with Nonrectangular-Gate Layouts
TL;DR: In this article, a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) dc characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal parts, is presented.
Journal ArticleDOI
Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
TL;DR: In this paper, a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes is presented, which shows that the doping concentration of the intrinsic region has influence on the sensitivity of the diodes.
Journal ArticleDOI
Ionizing radiation hardness tests of GaN HEMTs for harsh environments
Alexis C. Vilas Bôas,M. A. A. de Melo,R. B. B. Santos,Renato Giacomini,Nilberto H. Medina,L. E. Seixas,Saulo Finco,F. R Palomo,A. Romero-Maestre,M. A. Guazzelli +9 more
TL;DR: In this paper, the COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays and were tested in the On- and Off-state bias conditions.
Journal ArticleDOI
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
TL;DR: In this article, the influence of the fin inclination angle on some relevant parameters for analog design, such as threshold voltage, output conductance, transconductance, intrinsic voltage gain (AV), gate capacitance and unit-gain frequency, through 3D numeric simulation was analyzed.