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Renchao Che

Researcher at Fudan University

Publications -  338
Citations -  20236

Renchao Che is an academic researcher from Fudan University. The author has contributed to research in topics: Microwave & Reflection loss. The author has an hindex of 56, co-authored 247 publications receiving 11299 citations. Previous affiliations of Renchao Che include Shanghai University.

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Book ChapterDOI

In Situ TEM: Theory and Applications

TL;DR: The transmission electron microscope (TEM) is one of the most powerful techniques to obtain the microstructure of materials Equipped with energy dispersive X-ray (EDX) and electron energy loss spectroscopy (EELS), not only crystallographic structures but also chemical information at nano-scale, atomic scale and even sub-angstrom scale can be obtained as discussed by the authors.
Journal ArticleDOI

Domino Effect of Thickness Fluctuation on Subband Structure and Electron Transport within Semiconductor Cascade Structures.

TL;DR: In this research, the RFT of potential barriers and wells within a semiconductor multilayer is demonstrated to correlate with interfacial grading effect (IFG) and to affect the band offset strongly and the synergetic effect of RFT and IFG that serves as the first domino is shown to impact the subband structure and the electron transport successively.
Journal ArticleDOI

Strain-tuned optoelectronic properties of hollow gallium sulphide microspheres

TL;DR: A facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes is reported and novel guidelines toward the reasonable design of sulfide semiconductors with tunable photoluminescence properties are proposed.
Journal ArticleDOI

Quantum efficiency optimization by maximizing wave function overlap in type-II superlattice photodetectors.

TL;DR: A simple model based on modulus square of wave function (MSWF) is qualitatively built to shed new light on the relationship between QE and wave function overlap (WFO), finding that there exists a competition of WFO between the potential well regions and the interface regions, and a peak value of the overall WFO can be obtained under an appropriate voltage.