R
Richard A. Ferguson
Researcher at IBM
Publications - 56
Citations - 1709
Richard A. Ferguson is an academic researcher from IBM. The author has contributed to research in topics: Lithography & Resist. The author has an hindex of 20, co-authored 56 publications receiving 1697 citations.
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Patent
Process window based optical proximity correction of lithographic images
TL;DR: In this article, a method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate is presented, which comprises initially providing a mask pattern of a feature to be created on the substrate using the mask.
Journal ArticleDOI
Level-specific lithography optimization for 1-Gb DRAM
Alfred K. K. Wong,Richard A. Ferguson,Scott M. Mansfield,Antoinette F. Molless,Donald J. Samuels,R. Schuster,Alvin G. Thomas +6 more
TL;DR: In this paper, a general level-specific optimization methodology is applied to the critical levels of a 1-Gb DRAM design at 175-and 150-nm ground rules, which is based on process latitude quantification using the total window metric, depending on the illumination configuration, pattern shape and size, mask technology, mask tone, and photoresist characteristics.
Proceedings ArticleDOI
Approximate models for resist processing effects
TL;DR: In this paper, the effects of resist processing were incorporated into simulated images, and a Second Order Model based on a segmented development path was also presented, allowing the prediction of resist linewidths based on calculated image profiles.
Patent
Lithographic patterning method and mask set therefor with light field trim mask
TL;DR: In this paper, a phase shift trim mask was used to remove previous exposure defects in a lithographic patterning method and a mask set using a phase-shift trim mask having mask dimensions increased in block size.
Patent
Method of determining the printability of photomask defects
TL;DR: In this article, a method for determining if an undesirable feature on a photomask will adversely affect the performance of the semiconductor integrated circuit device that the mask is being used to create is presented.