Proceedings ArticleDOI
Approximate models for resist processing effects
Timothy A. Brunner,Richard A. Ferguson +1 more
- Vol. 2726, pp 198-207
TLDR
In this paper, the effects of resist processing were incorporated into simulated images, and a Second Order Model based on a segmented development path was also presented, allowing the prediction of resist linewidths based on calculated image profiles.Abstract:
Process windows are frequently generated from simulated aerial image profiles by use of a threshold model for the resist process, an assumption which is not accurate for many processes. In this paper, we present new computationally efficient methods for incorporating the effects of resist processing into simulated images. The First Order Model of development leads to the simple result that the resist linewidth W is smaller than the threshold linewidth Wthresh by an amount (Delta) W approximately equals 2 [ln(D(gamma) s)-1]/((gamma) s), where D is the resist thickness, (gamma) is the resist process non-linearity and s is the log-slope of the image. A Second Order Model based on a segmented development path is also presented. These models allow the prediction of resist linewidths based on calculated image profiles for any wet developed process: optical, X-ray or e-beam lithography, both positive and negative resists. The predictions of these models show good agreement with full PROLITH/2 resist profile simulations. We have also incorporated a Fickian diffusion of the intensity profile into our model, to account for acid diffusion, stepper vibration, lens aberrations, and other effects which reduce process resolution. Experimental process windows are well matched by such models, and are significantly different than threshold model predictions.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.read more
Citations
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References
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Journal ArticleDOI
Line‐Profile resist development simulation techniques
TL;DR: In this paper, the relative advantages and disadvantages of three different algorithms are compared for simulating the time evolution of two-dimensional line-edge profiles produced by a locally rate dependent surface etching phenomenon.
Proceedings ArticleDOI
Enhanced Lumped Parameter Model for Photolithography
TL;DR: In this paper, the authors introduced enhancements to the lumped parameter model for semiconductor optical lithography to calculate resist sidewall angle as well as resist linewidth in an approximate but extremely fast manner.
Journal ArticleDOI
High-resolution lithography with projection printing
TL;DR: In this paper, the authors introduce the concept of an operating point on a characteristic, which helps to define an optimized set of process parameters, and quantize each step independently, allowing to real-time control the photoresist development.
Book ChapterDOI
Lumped Parameter Model for Optical Lithography
Ron Hershel,Chris A. Mack +1 more
TL;DR: In this article, a lumped parameter model for optical lithography is defined, resulting in a direct relationship between the image intensity distribution and the critical dimension of the resulting pattern, and a simple photographic model relating development time to exposure is derived from the standard optical parameters of the lithographic tool.