Robert F. Davis

TL;DR: Stochichiometric variations in the GaN thin films together with the design of specific buffer layers can be utilized to strain engineer the material to an extent that greatly exceeds the possibilities known from other semiconductor systems because of the largely different covalent radii of the Ga and the N atom.

TL;DR: The extent and microstructural characteristics of the lateral overgrowth were a strong function of stripe orientation and threading dislocations, originating from the interface of the underlying GaN with the AlN buffer layer were contained in the GaN grown in the window regions.

TL;DR: In this paper, the microstructure and the lateral epitaxy mechanism of formation of homoepitaxially and selectively grown GaN structures within windows in SiO2 masks have been investigated by transmission electron microscopy (TEM) and scanning electron microscope.

TL;DR: In this article, a method of forming large device quality single crystals of silicon carbide is described, where the sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the material, specific preparation of the growth surface and seed crystals, and by controlling the thermal gradient between the source material and the seed crystal.

TL;DR: In this article, the Schottky barrier heights (SBHs), thermal stability, and chemical reactions of SiC polytypes have been investigated for a wide band gap semiconductor.