Showing papers in "Materials Science and Engineering B-advanced Functional Solid-state Materials in 1995"

A critical review of ohmic and rectifying contacts for silicon carbide

Abstract: For more than three decades, SiC has been investigated as a wide band gap semiconductor. This paper reviews ohmic and rectifying metal contacts on n- and p-type α- and β-SiC reported throughout that time period. Electrical characteristics, Schottky barrier heights (SBHs), thermal stability, and chemical reactions are discussed. Most metals formed very good rectifying contacts in the as-deposited condition on both n- and p-type 6H-SiC with Schottky barrier heights ⪖ 1 eV. Low ideality factors (n 1100 V) have been displayed in this material. The electrical properties of contacts on 3C-SiC have been more dependent on the quality of the 3C-SiC films, which have been plagued by higher defect densities than 6H-SiC. In general, a partial pinning of the Fermi level has been evidenced by positive correlations, which are less than 1 (≈ 0.2–0.6), between the SBHs and the metal work functions. Ohmic contacts with low contact resistivities (⪕ 10−5 Ω cm2), especially important for high power applications, on any of the SiC polytypes have been exceptionally difficult to achieve. Most of the ohmic contacts have relied on high doping concentrations in combination with annealing at temperatures between 800 and 1300 °C. Annealed Ni and Al have primarily been used in ohmic contact metallizations for n- and p-type SiC, respectively. The tendency of SiC to react with metals to form carbides and/or silicides at potential device operating temperatures ( ∼ 600 °C) can be a problem for potential long term applications at high temperature. These critical issues are discussed along with future perspectives for research approaches.

Texture development in polycrystalline thin films

Abstract: The distribution of crystallographic orientations of the grains in a polycrystalline film can evolve through a number of kinetic processes. Orientation evolution can occur before, during and after coalescence of islands to form a continuous film, during thickening of a film, and during post-deposition annealing. The energetic constraints leading to texture selection include surface and interface energy minimization, as well as strain-energy minimization. The final texture of a film depends on which texture-selection mechanisms and driving forces dominate, and is different for different films, substrates, and deposition conditions.

Tunnel-type GMR in metal-nonmetal granular alloy thin films

Abstract: Previously, a tunnel type of giant magnetoresistance (GMR) was discovered in a sputtered Co-base CoAlO granular alloy thin film, which was characteristic in exhibiting GMR of about 8% accompanying a large specific electrical resistivity of the order of 10 4 μΩ cm, due to a weak tunnel conductance in the metal-nonmetal granular structure of this alloy. In this paper, it has been found that GMR changes depending on O content and appears with a maximum near the percolation threshold point from metallic conductance to tunnel conductance in CoAlO granular alloy thin films. In addition, superparamagnetic behavior in the magnetic field and temperature dependencies of magnetization have been found for the GMR alloy films. The observations support the spin-dependent tunneling effect for this new GMR.

Experimental investigations on a sodium-ion-conducting polymer electrolyte based on poly(ethylene oxide) complexed with NaPF6

Abstract: Poly(ethylene oxide)-NaPF6 polymer electrolytes have been studied by X-ray diffraction, IR, differential thermal analysis, optical microscopy, polarization, and impedance spectroscopic techniques. The material is shown to be an ionic conductor with tion ≈ 0.98, tNa+ ≈ 0.45 and tanion ≈ 0.53. The σ vs. 1 T curves show apparent Arrhenius behaviour below and above Tm.

Novel fatigue-free layered structure ferroelectric thin films

Abstract: For the first time, fatigue-free ferroelectric thin-film capacitors have been fabricated, using pulsed laser deposition, with the layer-structure family of oxides as the ferroelectric material Stoichiometric thin films of layer-structured SiBr2(TaxNb2−x)O9 (0 < x < 2) compounds were successfully deposited on platinized Si/SiO2 wafers Technological opportunities now exist for the development of commercially viable ferroelectric random access memory devices using these materials So far, this has been primarily hindered by degradation problems such as fatigue in the currently investigated ferroelectric thin film capacitors, eg PbZrxTi1−xO3 films on Pt electrodes The identification of these fatigue-free thin-film materials and their processing, structure and properties are discussed in this paper The films show very good hysteresis characteristics with a remnant polarization value of 11 μC cm−2, and no fatigue was observed up to 109 switching cycles

Sympathetic nucleation: an overview

Abstract: Sympathetic nucleation is defined as the nucleation of a precipitate crystal at an interphase boundary of a crystal of the same phase when these crystals differ in composition from their matrix phase throughout the transformation process. Following a brief history of the discovery and interpretation of this phenomenon, the means of identifying the presence of sympathetic nucleation are described. The morphological configurations most frequently produced by sympathetic nucleation are illustrated. Heterogeneous nucleation theory is then applied to explain sympathetic nucleation. Particular emphasis is placed upon the driving force for sympathetic nucleation, since many of the effects of phase diagram geometry and supersaturation upon sympathetic nucleation can be simply explained upon this basis.

Boron-rich solids : a chance for high-efficiency high-temperature thermoelectric energy conversion

Abstract: Thermoelectric energy conversion is a very reliable way of generating electrical power, for example from solar heat or from waste industrial thermal energy. Boron-rich solids are shown to be very promising candidates for high efficiency thermoelectric energy conversion. The outstanding high melting points and extraordinary chemical stability allow their use under extreme conditions which are not accessible by most other materials. Some boron-rich semiconductors exhibit very favourable transport properties such as high Seebeck coefficients increasing monotonically up to very high temperatures, electrical conductivities with values typical of semiconductors, and very low thermal conductivities.

Fatigue-free SrBi2(TaxNb1−x)2O9 ferroelectric thin films

Abstract: Fatigue free ferroelectric thin films of layer-structured SrBi2(TaxNb1 −x)2O9 (0 < x < 1) (SBTN) have been processed, for the first time, using the metallorganic decomposition (MOD) technique. The precursors for the MOD process were synthesized by using Sr(C7H15COO)2, Bi(C7H15COO)3, Ta(OC2H5)5, Nb(OC2H5)5, and (C7H15COOH) as starting materials. Films of various compositions were spin coated onto Si-SiO2-Ti-Pt and sapphire substrates. The films were pyrolyzed at different temperatures and characterized for their phase, composition, microstructure and ferroelectric properties. The deposited films were of high quality and found to exhibit excellent ferroelectric properties; typically, at an applied voltage of 5 V, SBT films showed 2Pr values greater than 20 μC cm−2, dielectric constant around 300 and a coercive field Ec less than 60 kV cm−1. The films showed a very low fatigue rate up to 109 cycles and a leakage current density of less than 2 x 10−8 A cm−2 at 167 kV cm−1. These results compare well with earlier reports (S.B. Desu and D.P. Vijay, Mater. Sci. Eng. B, 32 (1995) 75) on the ferroelectric properties of laser ablated SBTN thin films. In addition, the Pr and Ec values obtained on laser ablated and MOD derived SBTN thin films are similar. However, a significant difference can be noticed in the value of the measured leakage current densities; MOD derived films exhibit current densities at least an order of magnitude lower than the laser ablated films. Since the MOD technique is amenable to large scale production, the results of this study bear significant technological implication for the commercial development of fatigue free nonvolatile random access memories.

The growth and elevated temperature stability of high refractory nickel-base single crystals

Abstract: Additions of refractory alloying elements to single-crystal and polycrystalline nickel-base alloys are known to provide potent high temperature strengthening. However, high levels of elements such as Re, W and Ta can result in unexpected modes of degradation during solidification and subsequent long-term exposures at high temperatures. Here the contributions of refractory alloying additions to various mechanisms of high temperature strengthening are discussed. In addition, the results of experiments which have identified two new modes of degradation associated with the presence of high levels of refractory alloying elements in nickel-base single crystals will be presented. Nucleation and growth of isolated columnar grains during solidification and discontinuous reactions at defects in the single-crystal structure will be shown to be extremely sensitive to the level of refractory alloying additions in a number of nickel-base single-crystal alloys.

Development of electrochemical cells based on (PEO + NaYF4) and (PEO + KYF4) polymer electrolytes

Abstract: Thin film ion conducting polymer electrolytes based on polyethylene oxide (PEO) complexed with NaYF4 and KYF4 salts have been prepared using the solution-cast technique. The complexation of NaYF4 and KYF4 salts with PEO were confirmed by infra-red and X-ray diffraction studies. The results of the electrical conductivity and transference number measurements in these electrolytes have been reported. Electrochemical cells with the polymer electrolytes (PEO+NaYF4) and (PEO+KYF4) have been fabricated with the configuration Na-(PEO + NaYF4)-(I2 + C + electrolyte) and K-(PEO + KYF4)-(I2 + C + electrolyte) respectively and their discharge characteristics studied. The open circuit voltages and short circuit currents were respectively found to be 2.45 V and 560 μA for the NaYF4 complexed cell and 2.4 V and 140 μA for the KYF4 complexed cell. Several other cell parameters have been evaluated and reported.

Stability of W as electrical contact on 6HSiC: phase relations and interface reactions in the ternary system WSiC

Abstract: In this study the system WSiC was investigated under two aspects, metallurgical and electrical, in order to understand the formation and the properties of W electrical contacts on 6HSiC. We combined two different approaches. For the examination of the phase relations in the ternary system we prepared bulk diffusion couples of W and monocrystalline SiC which were annealed and investigated using an SEM (secondary electron images, backscattered electron images, energy dispersive X-ray analysis), Secondly arc furnace molten powder samples, annealed at different temperatures, were analysed by X-ray diffraction. To investigate the electrical properties of a W/SiC junction transmission line contact patterns were sputter deposited onto wafer strips. These samples were subjected to similar heat treatments and the current/voltage characteristics were measured with a source measure unit, Individual contact resistivities could be evaluated using a special contact geometry. As a result we discovered a four-phase equilibrium in the WSiC system at 1400 ± 100°C: 3W5Si3 + 7Si8WSi2+7WC. This is in qualitative agreement with thermodynamic calculations. At 1300°C the equilibrium WSi2 + WC exists, At 1000°C the reaction kinetics are too slow to be detected in a bulk sample, The phase sequence developing in a bulk W/SiC diffusion couple at 1300°C is W/W5Si3/WC/SiC. W forms ohmic contacts on n-type 6HSiC which are stable up to 1000°C for at least several hours. From 1200°C upwards a reaction between W and SiC leads to the formation of tungsten silicides and carbides and hence a deterioration of the electrical properties. The films disintegrate into small crystals of WC and W3Si5 leading to a large spread of the resistances of the individual contacts.

c-Axis oriented ferroelectric SrBi2(TaxNb2-x)O9 thin films

Abstract: c-Axis oriented SrBi2(TaxNb2−x)O9 (SBTN) ferroelectric thin films (0 < x < 2) have been deposited, for the first time, using pulsed laser ablation. Films were stoichiometries close to the target composition were deposited successfully on MgO(100)/Pt(100) substrates. X-ray diffraction analysis of the films showed a predominant (00l) orientation with small amounts of (115) and (200) orientations. The c-axis orientation was introduced primarily by choosing (100) Pt as the substrate material which has a lattice spacing close to the lattice parameter a (basal plane) in the pseudo-tetragonal unit cell of the layered structure ferroelectric material. The orientation effect is also attributed to the high energy of the depositing species, which is characteristic of the laser ablation process. The films show very good ferroelectric properties at room temperature and no fatigue up to 109 cycles. For example, SBTN films with a composition close to x = 0.8 show a remnant polarization value of 11 μC cm, a coercive field of 45 kV cm−1 and a resistivity of 4 × 1013 Ω cm. Comparison of these values with those obtained from films with no preferred (00l) orientation indicate a significant drop in the coercive field by 20 kV−2 cm−1 and an increase in resistivity by an order of magnitude in the c-axis oriented films.

Growth of bulk SiC

Abstract: The problems of growing SiC ingots with LETI methods are considered in this paper. The analysis of factors influenced by conditions of different polytype modification crystals growing is conducted. Comparative characteristics of growing processes of crystals with the LETI method and the Lely method are obtained.

Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits

Abstract: The high temperature characteristics of devices and circuits realized in complementary metal oxide semiconductor (CMOS) technology on silicon-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 degrees C.

Low voltage varistors based on SrTiO3 ceramics

Abstract: Varistors exhibiting nonlinear resistance at low voltages of 4.5 to $30 V mm^{-1}$ have been realised from $SrTiO_3$ ceramics. These are processed from powders obtained from the gel-crystallite conversion technique. Doping with $\leq 1\%Y^{3+}$ enhances the average grain size to over $50\hspace{2mm} \mu m$, when sintered around 1650 K in static air. On annealing the ceramics, in $N_2 +H_2$ atmospheres, they acquire a low resistivity of 0.4 to 3.7 \Omega cm with positive temperature coefficient of resistance. They are painted with low melting point oxide mixtures of $PbO + Bi_20_3 + B_20_3$ and re-annealed. The energy dispersive X-ray results indicate selective melting reactions at the grain boundary layers with higher concentrations of the low melting point oxide constituents. The abnormally high dielectric constants, $\epsilon_ \gamma = 10^4 to 10^5$, point to the prevalence of GBL capacitance in these ceramics. Depending upon the conditions of the second annealing, the breakdown voltage could be adjusted from 0.2 to 1.5 V per grain boundary, without any change in the grain size. The nonlinearity coefficient a ranges from 6 to 15 and the barrier height from 0.15 to 0.3 eV. This can be explained on the basis of variable pinning of traps at the interface and also the extent of trap filling.

Interfacial reactions of W thin film on single-crystal (001) β-SiC

Abstract: Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10−3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.

TiMn2-based alloys as high hydrogen storage materials

Abstract: A series of TiMn multicomponent alloys based on the composition TiMn 2 with high hydrogen storage capacity were investigated. It is found that the alloy Ti 0.8 Zr 0.3 Mn 1.4 Mo 0.1 V 0.2 Cr 0.2 has a maximum hydrogen capacity of 3.4 H/M (mol H/mol alloy), theoretical electrochemical capacity of 560 mAh g −1 , exhibits a plateau pressure range between 0.006 and 0.01 MPa at 293 K. Addition of the elements Si and Al in a four component alloy causes the hydrogen storage capacity to decrease and plateau pressure to increase. Addition of a small amount of Mo increases hydrogen storage capacity. The substitution of V for Mn lowers the plateau pressure dramatically. The phase composition and microstructure of Ti 0.8 Zr 0.3 Mn 1.4 Mo 0.1 V 0.2 Cr 0.2 , which is one of the highest capacity TiMn 2 -based alloys, has been studied by X-ray diffraction, optical microscopy and scanning electron microscopy.

Hydrothermal preparation and characterization of ultrafine powders of ferrite spinels MFe2O4 (M = Fe, Zn and Ni)

Abstract: Ultrafine powders of ferrite MFe 2 O 4 (M = Fe, Zn and Ni) were prepared by hydrothermal method in the temperature range 130–150 °C in the presence of metal powders.

Epitaxial ferromagnetic thin films and superlattices of Mn-based metallic compounds on GaAs

Abstract: Epitaxial ferromagnetic thin films grown directly on III–V compound semiconductors can lead to the integration of magnetism and high-speed III–V electronics/photonics, offering possibilities of hybrid ferromagnetic-semiconductor devices. Despite stringent material requirements for this purpose, we have successfully grown some of Mn-based metallic compounds sharing common atoms with the underlying III–V using molecular beam epitaxy (MBE). First, it is shown that ferromagnetic MnGa thin films with perpendicular magnetization were obtained on (001) GaAs substrates. The c axis, which is the easy axis for magnetization, of the tetragonal unit cell is found to be desirably aligned perpendicular to the film plane. Second, in order to derive more functionality and to increase the freedom in material design, we have also created a new class of magnetic superlattices (SLs) of metallic compounds, MnGa/NiGa, on GaAs substrates. The MnGa/NiGa SLs show even stronger perpendicular magnetization and evenly-spaced multiple steps in the hysteresis loops in extraordinary Hall effect measurements. Third, ferromagnetic hexagonal MnAs, an As-based compound which is more compatible with existing III–V MBE technology, is shown to be successfully grown on GaAs. It was found that the MBE-grown MnAs/GaAs heterostructures have a unique epitaxial relationship and a mono-atomic template plays a critical role in determining the epitaxial orientation and magnetic properties.

Observation and analysis of epitaxial growth with reflectance-difference spectroscopy

Abstract: Reflectance-difference (RD) (-anisotropy) spectroscopy has developed into an established diagnostic tool for semiconductor epitaxy Major advantages include the simplicity of the approach and the capability of performing measurements in real time during growth Studies to date have emphasized understanding the origin of RD spectra, relating them to electronic and atomic structure of growth surfaces, and using them to obtain information about fundamental mechanisms of epitaxy The observation of RD oscillations during organometallic chemical vapor deposition, oscillations that are analogous to those seen in reflection high energy electron diffraction intensities during molecular beam epitaxy, is providing new opportunities for growth control Using (001) GaAs as an example, principles, representative results, and current critical issues are discussed

Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors

Abstract: This paper presents the results of an in-depth investigation into the chemical vapour deposition (CVD) growth of β-SiC on Si from H 3 SiCH 3 precursors. In agreement with previous work, we find an onset of CVD growth at substrate temperatures in the order of 750–800 °C. Higher temperatures lead to exponentially increasing growth rates until diffusion limitations set in at about 1000 °C. The highest quality films, with structural characteristics typical of single-crystal material, were deposited at about 1050°C. Substrate pretreatments, except for a pre-deposition HF dip, had surprisingly little influence on the crystal quality. Films deposited at substrate temperatures lower than 1000°C exhibited substantially broader IR absorption peaks and a higher degree of misorientation than those deposited at high temperature.

Defect production and annealing in ion implanted silicon carbide

Abstract: In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga+ ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron microscopy. From the RBS spectra the depth distributions of the defect density npd( z ) were calculated and are compared with profiles of the nuclear deposited energy density obtained by TRIM87. The results show a rapid accumulation of damage up to amorphization with increasing ion fluence for implantation temperatures below 573 K. At temperatures higher than 700 K amorphization obviously is avoided. The structure of layers implanted with higher ion fluences at temperatures above 500 K differs from that of layers produced at lower implantation temperatures.

Deep centers and electroluminescence in 4HSiC diodes with a p-type base region

Abstract: We have performed electrical and optical measurements to characterize the processes of radiative recombination of carriers for 4H-SiC p-n + junctions. We have detected three levels in the band gap, using capacitance and current deep-level transient spectroscopy, which are responsible for the bands observed in the electroluminescence spectra. We assume that the HK 1 center with an activation energy of E v + 0.229 eV and a hole capture cross-section of 8 × 10 −13 (300/ T ) 3 is related to the Al acceptor level.

Development of chemical beam epitaxy for the deposition of gallium nitride

Abstract: Modern approaches to the growth of high quality gallium nitride thin films have focused on the use of metal-organic vapour phase epitaxy or plasma-assisted gas source molecular beam epitaxy. However, both of these techniques possess limitations. The present study therefore examined a new approach to GaN deposition using chemical beam epitaxy and the new nitrogen precursor, hydrogen azide. Thin films of gallium nitride (GaN) were successfully prepared. X-ray photoelectron spectroscopy reveals that stoichiometric materials is formed with little or no contamination when HN3 and a range of Ga precursors react on the substrate at temperatures down to 450°C. The results indicate that the incorporation efficiency of N in the GaN film from HN3 is high, suggesting the precursor may provide a more attractive route to the deposition of GaN films under low pressure molecular beam conditions than is currently offered using ammonia or plasma-excited nitrogen beam sources. Electrical measurements on the grown films are also reported.

Fluorine-intercalated carbon fibers: II: An X-ray photoelectron spectroscopy study

Abstract: The X-ray photoelectron spectroscopy study of fluorine-intercalated carbon fibers has shown the formation of semi-ionic bonding between carbon and intercalated fluorine species, leading to an increase in the positive charge on the involved carbon atoms and a subsequent increase in C 1s binding energy. Covalent CF bonding is present at the external surface of the fibers. The relative amounts of these species are dependent on the intercalation rate and on the nature of the host fibers: polyacrylonitrile or pitch based, either as received or high temperature treated.

Boron doped diamond films: Electrical and optical characterization and the effect of compensating nitrogen

Abstract: Polycrystalline diamond films were prepared by microwave plasma assisted chemical vapour deposition from CH4H2 mixtures. For p-type doping with boron, trimethylborate was added at concentrations between 50 ppb and 500 ppm referred to the total gas phase. The boron concentration in the film, as determined by secondary ion mass spectrometry, varied between 1.1 × 1018 cm−3 and 2.1 × 1020 cm−3. A linear increase in the boron content in the film was observed for boron concentrations in the reactant gas up to 10 ppm. The boron incorporation saturates for gas phase concentrations of more than 50 ppm. For non-contact characterization of the doped films, Raman and Fourier transform spectroscopy were applied. With increasing boron concentration, the Raman spectra show an increasing asymmetry in the lineshape of the 1332 cm−1 zone centre optical phonon which is attributed to a Fano interference effect with the electronic continuum. Strong IR absorption around 3000 cm−1 due to acceptor ionization was observed and related to the boron concentration. Temperature dependent electrical measurements were taken to obtain information on the resistivity, mobility, activation energy and carrier concentration. Nitrogen is an omnipresent impurity in diamond and, as a deep donor, is able to compensate acceptors. In order to study the influence of nitrogen contamination, a series of diamond films with constant boron content and various nitrogen concentrations was prepared and characterized. The data reveal the strong influence of nitrogen on the properties of boron-doped diamond films. In particular, the conductivity is decreased by one order of magnitude, highlighting the compensating character of nitrogen in p-type doped diamond.

X-ray and differential scanning calorimetry study of the crystallization of amorphous Fe73.5 Cu1Nb3 Si13.5B9 alloy

Abstract: The crystallization behaviour, the lattice parameters of the crystallized phase and the crystallization kinetics of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy were investigated by X-ray diffraction and differential scanning calorimetry. When the alloy was annealed at above 480°C for 1 h, nanocrystalline Fe(Si) phase precipitated from the amorphous matrix. As the annealing temperature rose, the lattice parameter a0 of the Fe(Si) phase increased from 0.2838 nm to 0.2849 nm. At 600°C tetragonal Fe3B precipitated, and at 670°C f.c.c. Fe23B6. After pre-annealing above 400°C, the crystallization activation energy was raised significantly from 384 kJ Mol−1 to 494 kJ mol−1. During isothermal annealing the crystallization activation energy dropped from 520 kJ mol−1 to 360 kJ mol−1 as the annealing continued, while it increased appreciably with pre-annealing.

Stillwellite glass-ceramics with ferroelectric properties

Abstract: The process of crystallization of LaBGeO 5 and PrBGeO 5 phases with stillwellite structure from the glassy state is studied. Exotherms on differential thermal analysis curves for lanthanum borogermanate glasses are interpretated by using the X-ray diffraction and the second harmonic generation method data. It is shown that acentric nuclei of the stillwellite phase are formed at the early stages of crystallization. There is not any metastable phase, prior to stillwellite precipitation. Glass-ceramic samples with high stillwellite content were synthesized, and their properties were measured and compared with the properties of a single crystal of LaBGeO 5 .

Growth of thin β-SiC layers by carbonization of Si surfaces by rapid thermal processing

Abstract: The growth of thin SiC layers by carbonization via rapid thermal chemical vapour deposition at atmospheric pressure on Si(100) and Si(111) surfaces using propane (C 3 H 8 ) and hydrogen (H 2 ) at 11 min -1 as a carrier gas was investigated. The dependences of the growth kinetics, the crystal structure and the surface morphology of the SiC on C 3 H 8 concentration and ramp rate were determine by reflection high energy electron diffraction, scanning electron microscopy and ellipsometry. No Fundamental differences in growth kinetics were found between (100) or (111) substrates and n- or p-type Si. The propane concentration in the flowing gas shows the strongest influence on SiC thickness and morphology. The maximal layer thickness connected with a disturbed structure was maintained at 1330 o C and 0.025% C 3 H 8 . The best growth conditions regarding crystallinity were found at lower temperatures (1240 o C) and higher concentrations (above 0.1% C 3 H 8 ). At long growth cycles above 60 s and concentrations greater than 0.6% C 3 H 8 a graphite-like carbon phase on top of a single-crystal SiC layer occurred. Possible growth mechanisms were discussed. The observed ability of self-limited growth was used for large-area thin β-SiC film growth