4. Survey of Novel Multiphoton Active Materials 1257 4.1. Multiphoton Absorbing Systems 1257 4.2. Organic Molecules 1257 4.3. Organic Liquids and Liquid Crystals 1259 4.4. Conjugated Polymers 1259 4.4.1. Polydiacetylenes 1261 4.4.2. Polyphenylenevinylenes (PPVs) 1261 4.4.3. Polythiophenes 1263 4.4.4. Other Conjugated Polymers 1265 4.4.5. Dendrimers 1265 4.4.6. Hyperbranched Polymers 1267 4.5. Fullerenes 1267 4.6. Coordination and Organometallic Compounds 1271 4.6.1. Metal Dithiolenes 1271 4.6.2. Pyridine-Based Multidentate Ligands 1272 4.6.3. Other Transition-Metal Complexes 1273 4.6.4. Lanthanide Complexes 1275 4.6.5. Ferrocene Derivatives 1275 4.6.6. Alkynylruthenium Complexes 1279 4.6.7. Platinum Acetylides 1279 4.7. Porphyrins and Metallophophyrins 1279 4.8. Nanoparticles 1281 4.9. Biomolecules and Derivatives 1282 5. Nonlinear Optical Characterizations of Multiphoton Active Materials 1282

Multiphoton Absorbing Materials : Molecular Designs, Characterizations, and Applications

This review is concerned with quantum confinement effects in low-dimensional semiconductor systems. The emphasis is on the optical properties, including luminescence, of nanometre-sized microcrysta...

Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems

Following a brief introduction to the applications for wavelength conversion and the different available conversion techniques, the paper gives an in depth analysis of cross gain and cross phase wavelength conversion in semiconductor optical amplifiers. The influence of saturation filtering on the bandwidth of the converters is explained and conditions for conversion at 20 Gb/s or more are identified. The cross gain modulation scheme shows extinction ratio degradation for conversion to longer wavelengths. This can be overcome using cross phase modulation in semiconductor optical amplifiers that are integrated into interferometric structures. The first results for monolithic integrated interferometric wavelength converters are reviewed, and the quality of the converted signals is demonstrated by transmission of 10 Gb/s converted signals over 60 km of nondispersion shifted single mode fiber.

All-optical wavelength conversion by semiconductor optical amplifiers

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information1. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data2. Recently, ring lasers with extremely small size and low operating power have been made3,4,5,6,7, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40 µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20 ps with 5.5 fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

A fast low-power optical memory based on coupled micro-ring lasers.

Recent advances in developing nonlinear optical techniques for processing serial digital information at high speed are reviewed. The field has been transformed by the advent of semiconductor nonlinear devices capable of operation at 100 gigabits per second and higher, well beyond the current speed limits of commercial electronics. These devices are expected to become important in future high-capacity communications networks by allowing digital regeneration and other processing functions to be performed on data signals “on the fly” in the optical domain.

https://science.sciencemag.org/content/sci/286/5444/1523.full.pdf

Nonlinear Optics for High-Speed Digital Information Processing.

We describe the operation of a semiconductor laser amplifier as a nonlinear element, using a novel three-wavelength configuration, which enhances the recovery rate of the nonlinear refractive index and permits choice of its sign and magnitude. Simple rate-equation analysis suggests that 100-GHz operation should be possible with powers of ~1 W.

Three-wavelength device for all-optical signal processing.

Recent progress in the use of semiconductor laser amplifiers (SLA's) for high-speed all-optical switching is reviewed. We show that, despite SLA's having lifetimes of ⩾100 ps, they are, to date, the most promising material system for all-optical ultrafast signal processing. We highlight the role of SLA carrier dynamics, which permits switching rates faster than the recovery time. Experimental results are presented that imply that switching rates of as much as ∼100 GHz should be possible. Recent experiments are described in which SLA-based switches were incorporated into novel all-optical architectures.

Semiconductor laser amplifiers for ultrafast all-optical signal processing

A 40 Gbit/s all-optical XOR gate that uses a novel topology to allow high-speed operation is demonstrated. The gate used is a Mach-Zehnder interferometer comprising a hybrid-integrated planar silica waveguide structure and semiconductor optical amplifiers.

40 Gbit/s all-optical XOR gate based on hybrid-integrated Mach-Zehnder interferometer

We find evidence that quantum confinement of electrons in small semiconductor particles causes the nonlinear optical properties in the transparency region to differ markedly from those of bulk semiconductors. The optical Stark effect makes the dominant contribution to the third-order refractive nonlinearity.

Robert J. Manning

Papers

Nonlinear Optics for High-Speed Digital Information Processing.

Three-wavelength device for all-optical signal processing.

Semiconductor laser amplifiers for ultrafast all-optical signal processing

40 Gbit/s all-optical XOR gate based on hybrid-integrated Mach-Zehnder interferometer

Below-band-gap third-order optical nonlinearity of nanometer-size semiconductor crystallites.