R
Rong Zhao
Researcher at Singapore University of Technology and Design
Publications - 126
Citations - 3742
Rong Zhao is an academic researcher from Singapore University of Technology and Design. The author has contributed to research in topics: Phase-change memory & Crystallization. The author has an hindex of 26, co-authored 125 publications receiving 2937 citations. Previous affiliations of Rong Zhao include Data Storage Institute & Georgia Institute of Technology.
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Journal ArticleDOI
Breaking the Speed Limits of Phase-Change Memory
Desmond Loke,Desmond Loke,Desmond Loke,Tae Hoon Lee,W. J. Wang,Luping Shi,Rong Zhao,Y. C. Yeo,T. C. Chong,Stephen R. Elliott +9 more
TL;DR: Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed, which paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.
Journal ArticleDOI
Towards artificial general intelligence with hybrid Tianjic chip architecture.
Jing Pei,Lei Deng,Sen Song,Sen Song,Mingguo Zhao,Youhui Zhang,Shuang Wu,Guanrui Wang,Zhe Zou,Zhenzhi Wu,Wei He,Feng Chen,Ning Deng,Si Wu,Yu Wang,Yujie Wu,Z. Yang,Cheng Ma,Guoqi Li,Wentao Han,Huanglong Li,Huaqiang Wu,Rong Zhao,Yuan Xie,Luping Shi +24 more
TL;DR: The Tianjic chip is presented, which integrates neuroscience-oriented and computer-science-oriented approaches to artificial general intelligence to provide a hybrid, synergistic platform and is expected to stimulate AGI development by paving the way to more generalized hardware platforms.
Journal ArticleDOI
Phase change random access memory cell with superlattice-like structure
Tow Chong Chong,Luping Shi,Rong Zhao,P. K. Tan,Jianming Li,Hwee Kuan Lee,Xiangshui Miao,A. Y. Du,Chih-Hang Tung +8 more
TL;DR: In this paper, a superlattice-like structure incorporating two non-promising phase change materials was applied to phase change random access memory (PCRAM) cell, and the thermal conductivity of eight SLL layers cycle was found to be smaller than 30% of that of single layer material.
Journal ArticleDOI
Fast phase transitions induced by picosecond electrical pulses on phase change memory cells
TL;DR: In this article, the authors investigated the correlation between phase transition speed and material size and found that the size effects play increasingly important roles in enabling the ultrafast phase transition under electrical activation.
Journal ArticleDOI
Thickness Dependent Nano-Crystallization in Ge2Sb2Te5 Films and Its Effect on Devices
TL;DR: In this article, a thickness dependent nano-crystallization in ultra-thin Ge2Sb2Te5 films was studied by in-situ exothermal and isothermal electrical resistivity measurements.